Product Information

TLP2367(TPR,E

TLP2367(TPR,E electronic component of Toshiba

Datasheet
High Speed Optocouplers Photo-IC 2.7 to 5.5V 3750Vrms 2.5mA 50Mb
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.131 ea
Line Total: USD 1.13

37 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
11640 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000
3000 : USD 1.2495

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Data Rate
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Packaging
Number of Channels
Output Type
Isolation Voltage
Vf - Forward Voltage
If - Forward Current
Vr - Reverse Voltage
Pd - Power Dissipation
Output Current
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

TLP2367 Photocouplers GaAAs Infrared LED & Photo IC TLP2367TLP2367TLP2367TLP2367 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Factory Networking High-Speed Digital Interfacing for Instrumentation and Control Devices I/O Interface Boards 2. 2. 2. 2. GeneralGeneralGeneralGeneral The TLP2367 is 50-Mbps high speed photocoupler in small SO6 package. The TLP2367 consists of high-output GaAAs light-emitting diode coupled with integrated high gain, high speed photodetector, and has high speed switching performance at operation temperature from -40 to 125 and at supply voltage from 2.7 V to 5.5 V. The detector has a totem-pole output stage with current sourcing and sinking capabilities. The TLP2367 has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 25 kV/s. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Package: SO6 (2) Data transfer rate: 50 MBd (typ.) (NRZ) (3) Threshold input current: 4.0 mA (max) (4) Supply voltage: 2.7 to 5.5 V (5) Operating temperature: -40 to 125 (6) Propagation delay time: 20 ns (max) (7) Pulse width distortion: 8 ns (max) (8) Isolation voltage: 3750 Vrms (min) (9) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Japan Factory Note 1: When an EN60747-5-5 approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). Start of commercial production 2016-05 2016-2017 2017-10-25 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TLP2367 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 3: Cathode 4: GND 5: V (Output) O 6: V DD 11-4L1S 5. 5. 5. 5. Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note) Note: A 0.1-F bypass capacitor must be connected between pin 6 and pin 4. 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. 6.1. 6.1. 6.1. Truth TableTruth TableTruth TableTruth Table Input LED Output H ON L L OFF H 6.2. 6.2. 6.2. 6.2. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Dimension(Min) Unit Creepage distances 5.0 mm Clearance distances 5.0 Internal isolation thickness 0.4 2016-2017 2017-10-25 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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