TLP250 TOSHIBA Photocoupler IRED & Photo-IC TLP250 Industrial Inverter Inverter For Air Conditioner IGBT Gate Drive Unit: mm Power MOS FET Gate Drive The TOSHIBA TLP250 consists of an infrared emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP250 is suitable for gate driving circuit of IGBT or power MOS FET. Input threshold current: 5mA(max) Supply current : 11mA(max) Supply voltage : 10-35V Output current : 1.5A (max) Switching time t /t ): 0.5s(max) pLH pHL Isolation voltage: 2500V (min) rms UL-recognized: UL 1577, File No.E67349 TOSHIBA 11-10C4S cUL-recognized: CSA Component Acceptance Service No.5A Weight: 0.54 g (typ.) File No.E67349 VDE-Approved: EN 60747-5- 5 (Note 1) Note 1: When a VDE approved type is needed, please designate the Option(D4). Truth Table Tr1 Tr2 Pin Configuration (top view) On On Off Input LED Off Off On 1 8 2 7 I CC Schmatic 3 6 V CC 8 4 5 (T 1) r I F 2+ V 1 : N.C. O 5 : GND 7 2 : Anode 6 : V (Output) O V F 3 : Cathode 7 : V O 3- V O 4 : N.C. 8 : V CC 6 I O (T 2) r GND 5 A 0.1F bypass capcitor must be connected between pin 8 and 5 (See Note 5). Start of commercial production 1990-11 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP250 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 20 mA F Forward current derating (Ta 70C) I / Ta -0.36 mA / C F Peak transient forward curent (Note 1) I 1 A FPT Reverse voltage V 5 V R Diode power dissipation P 40 mW D Diode power dissipation derating (Ta70C) P /C -0.72 mW / C D Junction temperature Tj 125 C Hpeak output current (P 2.5s,f 15kHz) (Note 2) I -1.5 A W OPH Lpeak output current (P 2.5s,f 15kHz) (Note 2) I +1.5 A W OPL (Ta 70C) 35 Output voltage V V O (Ta 85C) 24 (Ta 70C) 35 Supply voltage V V CC (Ta 85C) 24 Output voltage derating (Ta 70C) V / Ta -0.73 V / C O Supply voltage derating (Ta 70C) V / Ta -0.73 V / C CC Power dissipation P 800 mW C Power dissipation derating (Ta 70C) P / C -14.5 mW / C C Junction temperature Tj 125 C Operating frequency (Note 3) f 25 kHz Operating temperature range T -20 to 85 C opr Storage temperature range T -55 to 125 C stg Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 60 s., R.H. 60 %) (Note 4) BV 2500 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW 1 s, 300 pps Note 2: Exporenential wavefom Note 3: Exporenential wavefom, IOPH -1.0 A( 2.5 s), IOPL +1.0 A( 2.5 s) Note 4: Device considerd a two terminal device: Pins 1, 2, 3 and 4 shorted together, and pins 5, 6, 7 and 8 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Input current, on I 7 8 10 mA F(ON) Input voltage, off V 0 0.8 V F(OFF) Supply voltage V 15 30 V CC Peak output current I /I 0.5 A OPH OPL Operating temperature T -20 25 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note : A ceramic capacitor(0.1 F) should be connected from pin 8 to pin 5 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching proparty. The total lead length between capacitor and coupler should not exceed 1 cm. Note : Input signal rise time(fall time)<0.5 s. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation Detector LED