Product Information

TLP2770(D4,E

TLP2770(D4,E electronic component of Toshiba

Datasheet
High Speed Optocouplers Photo-IC 2.7-5.5V 5000Vrms .4mA 20Mbps

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.183 ea
Line Total: USD 6.18

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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TLP2770(D4,E
Toshiba

1 : USD 6.183
10 : USD 1.6632
100 : USD 1.2852
500 : USD 1.1448
1000 : USD 1.0185
2500 : USD 0.9839

     
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RoHS - XON
Icon ROHS
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Maximum Operating Temperature
Minimum Operating Temperature
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Series
Packaging
Number of Channels
Output Type
Isolation Voltage
Vf - Forward Voltage
If - Forward Current
Vr - Reverse Voltage
Pd - Power Dissipation
Output Current
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TLP2770 Photocouplers GaAAs Infrared LED & Photo IC TLP2770TLP2770TLP2770TLP2770 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Programmable Logic Controllers (PLCs) Battery Management System (BMS) Industrial Inverters 2. 2. 2. 2. GeneralGeneralGeneralGeneral The TLP2770 is a 20-Mbps low-power photocoupler in the small SO6L package. It is housed in a thin SO6L package of 2.3 mm (max). The TLP2770 has guaranteed the isolation voltage 5 kVrms and compliant with international safety standards for reinforced insulation. The TLP2770 consumes supply current (I /I ) of only 0.4 mA maximum over the entire operating DDL DDH temperature range of -40 to 125 and operates at a supply voltage as low as 2.7 V, contributing to a reduction in power consumption of various systems. The input forward current can be less than 1 mA maximum, allowing direct drive by a microcontroller. The detector has a totem-pole output stage with current sourcing and sinking capabilities. The TLP2770 has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 20 kV/s. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Package: SO6L (2) Data transfer rate: 20 MBd (typ.) (NRZ) (3) Supply current: 0.4 mA (max) (4) Threshold input current: 1 mA (max) (5) Supply voltage: 2.7 to 5.5 V (6) Operating temperature: -40 to 125 (7) Propagation delay time: t /t = 60 ns (max) pHL pLH (8) Pulse width distortion: t -t = 25 ns (max) pHL pLH (9) Isolation voltage: 5000 Vrms (min) (10) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN60747-5-5, EN60065, EN60950-1, EN 62368-1 (Note 1)(Note 1)(Note 1) Option (D4) Note 1: When a VDE approved type is needed, please designate the Option (D4)Option (D4)Option (D4). Start of commercial production 2016-08 2016-2017 2017-11-15 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TLP2770 4. 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 2: N.C. 3: Cathode 4: GND 5: V (Output) O 6: V DD 11-4N1A 5. 5. Internal Circuit (Note)Internal Circuit (Note) 5. 5. Internal Circuit (Note)Internal Circuit (Note) Note: A 0.1-F bypass capacitor must be connected between pin 6 and pin 4. 6. 6. 6. 6. Principle of OperationPrinciple of OperationPrinciple of OperationPrinciple of Operation 6.1. 6.1. Truth TableTruth Table 6.1. 6.1. Truth TableTruth Table Input LED Output H ON H L OFF L 6.2. 6.2. 6.2. 6.2. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Dimension (min) Unit Creepage distances 8.0 mm Clearance distances 8.0 Internal isolation thickness 0.4 2016-2017 2017-11-15 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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