X-On Electronics has gained recognition as a prominent supplier of TLP291(GR,SE Transistor Output Optocouplers across the USA, India, Europe, Australia, and various other global locations. TLP291(GR,SE Transistor Output Optocouplers are a product manufactured by Toshiba. We provide cost-effective solutions for Transistor Output Optocouplers, ensuring timely deliveries around the world.

TLP291(GR,SE Toshiba

TLP291(GR,SE electronic component of Toshiba
TLP291(GR,SE Toshiba
TLP291(GR,SE Transistor Output Optocouplers
TLP291(GR,SE  Optoelectronics

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Part No. TLP291(GR,SE
Manufacturer: Toshiba
Category: Transistor Output Optocouplers
Description: Toshiba Transistor Output Optocouplers Gen Purp 1-Circuit 50mA 80V 3750Vrms
Datasheet: TLP291(GR,SE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.8012 ea
Line Total: USD 4.01 
Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
2239
Ship by Thu. 12 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 0.823
10 : USD 0.6574
30 : USD 0.5868
175 : USD 0.2933
525 : USD 0.2659
1050 : USD 0.2494

   
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We are delighted to provide the TLP291(GR,SE from our Transistor Output Optocouplers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TLP291(GR,SE and other electronic components in the Transistor Output Optocouplers category and beyond.

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TLP291(SE Photocouplers Infrared LED & Photo Transistor TLP291(SETLP291(SETLP291(SETLP291(SE 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Switching Power Supplies Programmable Logic Controllers (PLCs) I/O Interface Boards 2. 2. 2. 2. GeneralGeneralGeneralGeneral TLP291(SE consists of photo transistor optically coupled to an infrared emitting diode. TLP291(SE is housed in the SO4 package, very small and thin coupler. Since TLP291(SE is guaranteed wide operating temperature (T = -55 to a 110 ) and high isolation voltage (3750 Vrms), it s suitable for high-density surface mounting applications such as small switching power supplies and programmable controllers. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Collector-emitter voltage: 80 V (min) (2) Current transfer ratio: 50 % (min) GB Rank: 100 % (min) (3) Isolation voltage: 3750 Vrms (min) (4) Operating temperature: -55 to 110 (5) Safety standards UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN 60747-5-5, EN 62368-1 (Note 1)(Note 1)(Note 1) CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory Note 1: When a VDE approved type is needed, please designate the Option (V4)Option (V4)Option (V4)Option (V4). 4. Packaging and Pin Assignment 4. 4. 4. Packaging and Pin AssignmentPackaging and Pin AssignmentPackaging and Pin Assignment 1: Anode 2: Cathode 3: Emitter 4: Collector 11-3C1 Start of commercial production 2012-02 2016-2019 2019-07-08 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0TLP291(SE 5. 5. 5. 5. Mechanical ParametersMechanical ParametersMechanical ParametersMechanical Parameters Characteristics Min Unit Creepage distances 5.0 mm Clearance 5.0 Internal isolation thickness 0.4 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit LED Input forward current I 50 mA F Input forward current derating (T 90 ) I /T -1.5 mA/ a F a Input forward current (pulsed) I (Note 1) 1 A FP Input reverse voltage V 5 V R Input power dissipation P 100 mW D Input power dissipation derating (T 90 ) P /T -3.0 mW/ a D a Junction temperature T 125 j Detector Collector-emitter voltage V 80 V CEO Emitter-collector voltage V 7 V ECO Collector current I 50 mA C Collector power dissipation P 150 mW C Collector power dissipation (T 25 ) P /T -1.5 mW/ a C a derating Junction temperature T 125 j Common Operating temperature T -55 to 110 opr Storage temperature T -55 to 125 stg Lead soldering temperature (10 s) T 260 sol Total power dissipation P 200 mW T Total power dissipation derating (T 25 ) P /T -2.0 mW/ a T a Isolation voltage AC, 60 s, R.H. 60 % BV (Note 2) 3750 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width (PW) 0.1 ms, f = 100 Hz Note 2: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. 7. 7. 7. 7. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Test Condition Min Typ. Max Unit LED Input forward voltage V I = 10 mA 1.1 1.25 1.4 V F F Input reverse current I V = 5 V 5 A R R Input capacitance C V = 0 V, f = 1 MHz 30 pF t Detector Collector-emitter breakdown V I = 0.5 mA 80 V (BR)CEO C voltage Emitter-collector breakdown V I = 0.1 mA 7 V (BR)ECO E voltage Dark Current I V = 48 V 0.001 0.08 A DARK CE V = 48 V, T = 85 2 50 CE a Collector-emitter capacitance C V = 0 V, f = 1 MHz 10 pF CE 2016-2019 2019-07-08 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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