Product Information

TLP292-4(V4LATRE

TLP292-4(V4LATRE electronic component of Toshiba

Datasheet
Transistor Output Optocouplers 4ch Transistor opto coupler

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.6578 ea
Line Total: USD 1315.6

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 2000
Multiples : 2000
2000 : USD 1.9895
4000 : USD 1.9732
6000 : USD 1.9567
8000 : USD 1.94
10000 : USD 1.9233
12000 : USD 1.9067
20000 : USD 1.8899
30000 : USD 1.8731
50000 : USD 1.8563

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 2000
Multiples : 2000
2000 : USD 0.6578

     
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TLP292-4 TOSHIBA PHOTOCOUPLER IRED & PHOTO-TRANSISTOR TLP292-4 Programmable Controllers Switching Power Supplies Simplex/Multiplex Data Transmissions Unit: mm TLP292-4 consists of phototransistors optically coupled to two infrared emitting diodes connected inverse parallel, and can operate directly by AC input current. TLP292-4 is housed in the very small and thin SO16 package. Since TLP292-4 is guaranteed wide operating temperature (Ta=-55 to 125 C) and high isolation voltage (3750 Vrms), it is suitable for high-density surface mount applications such as programmable controllers. Collector-Emitter Voltage : 80 V (min) Current Transfer Ratio : 50% (min) Rank GB: 100 %(min) Isolation Voltage : 3750 Vrms (min) TOSHIBA 11-11F1 Weight: 0.19 g (typ.) Operation temperature range: -55 to 125 C Safety standards UL-recognized: UL 1577, File No.E67349 Pin Configuration cUL-recognized: CSA Component Acceptance Service No.5A TLP292-4 File No.E67349 CQC- approved : GB4943.1, GB8898 Thailand Factory 1 16 2 15 2000 m 3 14 VDE- approved: EN 60747-5-5, EN 62368-1 (Note1) 13 4 Note1 : When a VDE approved type is needed, 12 5 please designate the Option (V4). 11 6 Construction Mechanical Rating 7 10 Creepage Distance 5.0 mm (min) 8 9 Clearance 5.0 mm (min) Internal isolation thickness 0.4 mm (min) 1,3,5,7 : Cathode, Anode 2,4,6,8 : Anode, Cathode 9,11,13,15 : Emitter 10,12,14,16 : Collector Start of commercial production 2014-04 2019 1 2019-05-20 Toshiba Electronic Devices & Storage Corporation TLP292-4 Current Transfer Ratio (Unless otherwise specified, Ta=25C) Current Transfer Ratio (%) Rank Test condition Marking of Classification I / I (Note1) C F Min Max IF =5 mA, VCE = 5 V Blank 50 600 Brank GB 100 600 GB LA (Note2) IF =0.5 mA, VCE = 5 V 50 600 LA LGB (Note2) 100 600 LB Note 1: Specify both the part number and a rank in this format when ordering. Example: rank GB: TLP292-4(GB,E For safety standard certification, however, specify the part number alone. TLP292 4 (GB,E: TLP292-4 Note2: The LA and LGB rank are made CTR rank of the low input current condition. 2019 2 2019-05-20 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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