Product Information

TLP3082(S,C,F)

TLP3082(S,C,F) electronic component of Toshiba

Datasheet
Triac & SCR Output Optocouplers Triac coupler IFT 10mA VDRM=800V. ZC

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 2.862
10 : USD 1.0098
100 : USD 0.5649
500 : USD 0.5281
1000 : USD 0.4515
2500 : USD 0.4363
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Isolation Voltage
Maximum Trigger Current
Off-state Output Voltage - VDRM
Maximum Continuous Output Current
Zero-Crossing Circuit
Series
Packaging
Number of Channels
If - Forward Current
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Height
Length
Output Type
Package / Case
Width
Brand
Mounting Style
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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TLP3082(S) TOSHIBA Photocoupler IRED & Photo Triac TLP3082(S) Unit: mm Office Machine Household Use Equipment Triac Driver Solid State Relay The TOSHIBA TLP3082(S) consists of a zero voltage crossing turn-on photo-triac optically coupled to an infrared emitting diode in a six lead plastic DIP package. Features Peak off-state voltage: 800 V (min) JEDEC Trigger LED current: 10 mA (max) JEITA On-state current: 100 mA (max) TOSHIBA 11-7A9S Isolation voltage: 5000 Vrms (min) UL-recognized: UL 1577, File No.E67349 Weight: 0.39 g (Typ.) cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved : EN 60747-5-5 , EN 62368-1 (Note 1) Note1 : When a VDE approved type is needed, please designate the Option(D4). Note : When specifying the application type name for certification testing, be sure to use the standard product type name, e.g. TLP3082 Construction mechanical rating 7.62 mm pitch 10.16 mm pitch standard type TLPXXXF type Creepage distance 7.0 mm (min) 8.0 mm (min) Clearance 7.0 mm (min) 8.0 mm (min) Insulation thickness 0.4 mm (min) 0.4 mm (min) Pin configuration (top view) 1: Anode 1 6 2: Cathode 3: N.C. 2 4:Terminal 1 6:Terminal 2 ZC 4 3 ZC:Zero-cross Circuit Start of commercial production 2007-01 2019 1 2019-06-17 Toshiba Electronic Devices & Storage Corporation TLP3082(S) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta53C) I /C 0.7 mA /C F Peak forward current (100s pulse, 100pps) I 1 A FP Reverse voltage V 5 V R Power Dissipation P 100 mW D Power Dissipation Derating (Ta 53C) P /C -1.4 mW/C D Junction temperature Tj 125 C Off-state output terminal voltage V 800 V DRM Ta=25C 100 On-state RMS current I T(RMS) mA Ta=70C 50 On-state current derating (Ta25C) I / C -1.1 mA /C T Peak on-state current (100s pulse, 120pps) I 2 A TP Peak nonrepetitive surge current (Pw=10ms) ITSM 1.2 A Output Power Dissipation P 300 mW O mW/C Output Power Dissipation Derating (Ta 25C) P /C -3.3 O C Junction temperature T 115 j Storage temperature range T 55 to 125 C stg Operating temperature range Topr 40 to 100 C Lead soldering temperature (10 s) T 260 C sol Isolation voltage (AC,60 s, R.H. 60 %) (Note 1) BV 5000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins1, 2 and 3 shorted together and pin4 and pin6 shorted together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage V 240 Vac AC Forward current I 15 20 25 mA F Peak on-state current I 1 A TP Operating temperature T 25 85 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the devices. Each item also has its own independent guideline document. In developing designs using these products, please confirm the specified characteristics shown in these documents. 2019 2 2019-06-17 Toshiba Electronic Devices & Storage Corporation Detector LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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