Product Information

TLP3110F

TLP3110F electronic component of Toshiba

Datasheet
Relay SSR 50mA 1.4V DC-IN 0.35A 60V 4-Pin SOP

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

70: USD 1.4062 ea
Line Total: USD 98.43

0 - Global Stock
MOQ: 70  Multiples: 70
Pack Size: 70
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 70
Multiples : 70

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TLP3110F
Toshiba

70 : USD 1.4062

     
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TLP3110 TOSHIBA Photocoupler GaAs Ired & PhotoMOSFET TLP3110 Measurement Instruments Logic IC Testers / Memory Testers Unit in mm Board Testers / Scanners The TOSHIBA mini flat photo relay TLP3110 is a small outline photo relay, suitable for surface mount assembly. The TLP3110 consists of a GaAs infrared emitting diode optically coupled to a photoMOSFET in a 4 pin lead package, and has characteristics of small offstate current and small output terminal capacitance, which enable the TLP3110 to be applied to measurement instruments. 1formA Peak offstate voltage: 60 V (min) Trigger LED current: 4 mA (max) On state current: 350 mA (max) On state resistance: 1.2 (max) Isolation voltage: 1500 V (min) rms UL recognized: UL1577, file No. E67349 JEDEC JEITA TOSHIBA 115H1 Weight: 0.1 g (typ.) Pin Configuration (top view) Schematic 1 4 1 4 2 3 2 3 1 : ANODE 2 : CATHODE 3 : DRAIN 4 : DRAIN 1 2009-02-12 TLP3110 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 50 mA F Forward current derating (Ta 25C) I /C 0.5 mA/C F Reverse voltage V 6 V R Junction temperature T 125 C j Offstate output voltage V 60 V OFF Onstate current I 350 mA ON On-State Current Derating (Ta 25C) I /C 3.5 mA/C ON Junction temperature T 125 C j Storage temperature T 40 to 125 C stg Operating temperature T 20 to 85 C opr Soldering temperature (10 s) T 260 C sol Isolation voltage (AC, 1 min., R.H. 60%) (Note 1) B 1500 VS V rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1): Device considered a twoterminal device: Pins 1 and 3 shorted together, and pins 4 and 6 shorted together. Recommended Operating Conditions Characteristic Symbol Min.Typ.Max.Unit Supply voltage V 48 V OFF Forward current I 10 30 mA F Onstate current I 350 mA ON Operating temperature T -20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min. Typ. Max.Unit Forward voltage V I = 20 mA 1.0 1.2 1.4 V F F Reverse voltage I V = 6 V 10 A R R Capacitance C V = 0, f = 1 MHz 15 pF T Offstate current I V = 30 V, Ta = 50 C 0.4 1 nA OFF OFF Capacitance C V = 0, f = 1 MHz 100 150 pF OFF 2 2009-02-12 Detector LED Detector LED

Tariff Desc

8536.49.00 RELAYS, solid state, having an operating voltage NOT exceeding
600 V AC or 300 V DC, but NOT including protective monitoring TC 9320885

ELECTRICAL APPARATUS FOR SWITCHING OR PROTECTING ELECTRICAL CIRCUITS, OR FOR MAKING CONNECTIONS TO OR IN ELECTRICAL CIRCUITS FOR EXAMPLE, SWITCHES, RELAYS.
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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