Product Information

TLP3306(TP15,F

TLP3306(TP15,F electronic component of Toshiba

Datasheet
MOSFET Output Optocouplers Photorelay Voff=75V Ion=0.4A Ron=1.5Ohm

Manufacturer: Toshiba
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Price (USD)

1500: USD 2.5063 ea
Line Total: USD 3759.45

8730 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
11640 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1500
Multiples : 1500
1500 : USD 2.301

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Isolation Voltage
Maximum Operating Temperature
Minimum Operating Temperature
Series
Packaging
Output Type
Number of Channels
If - Forward Current
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Output Current
Package / Case
Brand
Mounting Style
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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TLP3306 Photocouplers Photorelay TLP3306TLP3306TLP3306TLP3306 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Speed Memory Testers High-Speed Logic IC Testers Medical instruments Power supplies 2. 2. 2. 2. GeneralGeneralGeneralGeneral The TLP3306 is a photorelay in a 4-pin USOP that consists of a photo MOSFET optically coupled with an infrared LED. Even though the TLP3306 photorelay is housed in a tiny USOP package, it offers low on-resistance and high isolation voltage. The ability to switch high-current loads reliably makes it suitable for space-limited switching applications. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Normally open (1-Form-A) (2) OFF-state output terminal voltage: 75 V (min) (3) Trigger LED current: 3 mA (max) (4) ON-state current: 400 mA (max) (5) ON-state resistance: 1.0 (typ.), 1.5 (max) (6) OFF-state Capacitance: 30 pF (typ.) (7) Isolation voltage: 1000 Vrms (min) (8) Safety standard UL-recognized: UL 1577, File No.E67349 4. 4. 4. 4. Packaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin Configuration 1: Anode 2: Cathode 3: Drain 4: Drain 11-2C1S Start of commercial production 2012-09 2017-2020 2020-02-19 1 Toshiba Electronic Devices & Storage Corporation Rev.5.0TLP3306 5. 5. 5. 5. Internal CircuitInternal CircuitInternal CircuitInternal Circuit Fig. 5.1 Internal Circuit Fig. Fig. Fig. 5.15.15.1 Internal CircuitInternal CircuitInternal Circuit 6. 6. 6. 6. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit LED Input forward current I 50 mA F Input forward current derating (T 25 ) I /T -0.5 mA/ a F a Input reverse voltage V 5 V R Input power dissipation P 50 mW D Input power dissipation derating (T 25 ) P /T -0.5 mW/ a D a Junction temperature T 125 j Detector OFF-state output terminal voltage V 75 V OFF ON-state current I 400 mA ON ON-state current derating (T 25 ) I /T -4.0 mA/ a ON a ON-state current (pulsed) (t = 100 ms, duty = 1/10) I 1.2 A ONP Output power dissipation P 200 mW O Output power dissipation derating (T 25 ) P /T -2.0 mW/ a O a Junction temperature T 125 j Common Storage temperature T -40 to 125 stg Operating temperature T -40 to 85 opr Lead soldering temperature (10 s) T 260 sol Isolation voltage (AC, 60 s, R.H. 60 %) BV (Note 1) 1000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together. Caution:This device is sensitive to electrostatic discharge (ESD). Extreme ESD conditions should be guarded against by using proper antistatic precautions for the worktable, operator, solder iron, soldering equipment and so on. 7. 7. Recommended Operating Conditions (Note)Recommended Operating Conditions (Note) 7. 7. Recommended Operating Conditions (Note)Recommended Operating Conditions (Note) Characteristics Symbol Note Min Typ. Max Unit Input forward current I 5 7.5 20 mA F Operating temperature T -20 65 opr Note: The recommended operating conditions are given as a design guide necessary to obtain the intended performance of the device. Each parameter is an independent value. When creating a system design using this device, the electrical characteristics specified in this data sheet should also be considered. 2017-2020 2020-02-19 2 Toshiba Electronic Devices & Storage Corporation Rev.5.0

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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