Product Information

TLP5214(D4,E

TLP5214(D4,E electronic component of Toshiba

Datasheet
Toshiba Logic Output Optocouplers Optocoupler IGBT 4A

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 7.2105 ea
Line Total: USD 7.21

1 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

TLP5214(D4,E
Toshiba

1 : USD 7.2105
10 : USD 5.313
50 : USD 5.29
100 : USD 4.025
250 : USD 4.0135
500 : USD 3.887

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rise Time
Fall Time
Output Type
Package / Case
Number of Channels
Isolation Voltage
Maximum Continuous Output Current
If - Forward Current
Vf - Forward Voltage
Vr - Reverse Voltage
Propagation Delay - Max
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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TLP5214 Photocouplers IRED & Photo IC TLP5214 Isolated IGBT/Power MOSFET gate drive AC and brushless DC motor drives Unit: mm Industrial Inverters and Uninterruptible Power Supply (UPS) The TLP5214 is a highly integrated 4.0A output current IGBT gate drive photo- coupler housed in a long creepage and clearance SO16L package. The TLP5214, a smart gate driver photocoupler, includes functions of IGBT desaturation detection, isolated fault status feedback, soft IGBT turn-off, active Miller cramping and under voltage lockout (UVLO). This photocoupler is suitable for driving IGBT and power MOSFET used in inverter applications. The TLP5214 consists two infrared LEDs and two high-gain and high-speed ICs. They realize high current, high-speed output control and output fault status feedback. Peak output current: 4.0 A (max) Guaranteed performance over temperature: 40C to 110C Supply current: 3.5 mA (max) Power supply voltage: 15 V to 30 V TOSHIBA 11-10M1 Threshold input current: I = 6 mA (max) FLH Weight: 0.37 g (typ.) Switching time (tp / tp ) : 150 ns (max) LH HL Common-mode transient immunity: 35 kV/ s (min) Isolation voltage: 5000 Vrms (min) Construction mechanical rating UL-recognized: UL 1577, File No.E67349 SO16L cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 Height 2.3 mm (max) Creepage Distance 8.0 mm (min) VDE-approved : EN 60747-5-5, EN 62368-1 (Note 1) Clearance 8.0 mm (min) Insulation Thickness 0.4 mm (min) CQC-approved: GB4943.1, GB8898 Japan Factory Note 1 : When a VDE approved type is needed, please designate the Option(D4). Truth Table DESAT FAULT UVLO I F V O -V ) (VCC2 E (14Pin DESAT Terminal Input) (3Pin FAULT Terminal Output) + OFF Not Active ( > V ) Not Active High Low UVLO + Not Active ( > V ) Low ( < V ) High High UVLO DESATth ON + Not Active ( > V ) High ( > V ) Low ( FAULT) Low UVLO DESATth ON - Active ( < V ) Not Active High Low UVLO ON - Active ( < V ) Not Active High Low UVLO OFF Start of commercial production 2014-05 2019 1 2019-10-31 Toshiba Electronic Devices & Storage Corporation TLP5214 Pin Configuration (top view) 1 : V S 1 16 V V E S 2 : V CC1 3 : FAULT 2 15 V V LED CC1 4 : V S 5 : CATHODE 14 3 DESAT FAULT 6 : ANODE 7 : ANODE 4 V 13 V CC2 8 : CATHODE S 9 : V EE V 5 12 CATHODE EE 10 : V CLAMP 11 : V OUT V 6 11 OUT ANODE 12 : V EE 13 : V CC2 V 10 7 ANODE CLAMP 14 : DESAT 15 : V LED V 9 8 EE 16 : V CATHODE E Internal Circuit VCC2 UVLO ANODE Vout CATHODE DESAT DESAT VEE SHIELD V CLAMP VCLAMP VCC1 VE FAULT Vs VLED Note: A 1-F bypass capacitor must be connected between pins 9 and 13, pins 13 and 16. 2019 2 2019-10-31 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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