Product Information

TLP621GRTP1FT

TLP621GRTP1FT electronic component of Toshiba

Datasheet
Transistor Output Optocouplers TR CTR=100-300%

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8518 ea
Line Total: USD 0.85

1940 - Global Stock
Ships to you by
Mon. 29 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1940 - Global Stock


Ships to you by Mon. 29 Apr

MOQ : 1
Multiples : 1
1 : USD 0.8518
10 : USD 0.4259
50 : USD 0.3833
250 : USD 0.3194
500 : USD 0.2875

     
Manufacturer
Product Category
Current Transfer Ratio
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
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TLP621,TLP6212,TLP621 4 TOSHIBA Photocoupler IRED & Photo Transistor TLP621,TLP621 2,TLP621 4 Programmable Controller Unit: mm AC / DCInput Module Solid State Relay The TOSHIBA TLP621, 2 and 4 consists of a photo transistor optically coupled to an infrared emitting diode. The TLP621 2 offers two isolated channels in an eight lead plastic DIP, which the TLP621 4 provides four isolated channels in a sixteen plastic DIP. Collectoremitter voltage: 55 V (min.) Current transfer ratio: 50% (min.) TOSHIBA 11 5B2 Rank GB: 100% (min.) Weight: 0.26 g (typ.) Isolation voltage : 5000Vrms(min) UL-recognized: UL 1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN 60747-5-5 (Note 1) Note 1 :When a VDE approved type is needed, please designate the Option (D4). Pin Configurations (top view) TLP621 TLP621-2 TLP621-4 1 4 1 8 1 16 TOSHIBA 11 10C4 2 2 2 7 15 3 Weight: 0.54 g (typ.) 1: Anode 3 6 3 14 2: Cathode 3: Emitter 4: Collector 4 5 4 13 1, 3: Anode 5 12 2, 4: Cathode 5, 7: Emitter 6, 8: Collector 11 6 7 10 8 9 1, 3, 5, 7: Anode 2, 4, 6, 8: Cathode 9, 11, 13, 15: Emitter 10, 12, 14, 16: Collector TOSHIBA 11 20A3 Weight: 1.1 g (typ.) 7.62 mm pitch 10.16 mm pitch standard type TLPxxxF type Creepage distance : 6.4 mm (min.) 8.0 mm (min) Clearance : 6.4 mm (min.) 8.0 mm (min) Insulation thickness : 0.4 mm (min.) 0.4 mm (min) Start of commercial production 1983-02 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP621,TLP6212,TLP621 4 Current Transfer Ratio Current Transfer Ratio Classi (%) (I / I ) C F Marking Of fication Type I = 5mA, V = 5V, Ta = 25C F CE Classification *1 Min. Max. (None) 50 600 Blank, Y , YE, G, G , GR, B, BL, GB Rank Y 50 150 YE, Y Rank GR 100 300 GR, G, G Rank BL 200 600 BL,B TLP621 Rank GB 100 600 GB, GR, G, G , BL, B Rank YH 75 150 Y Rank GRL 100 200 G Rank GRH 150 300 G Rank BLL 200 400 B (None) 50 600 Blank, GR, BL, GB TLP6212 TLP6214 Rank GB 100 600 GB, GR, BL *1: Ex. rank GB: TLP621 (GB) (Note) Application type name for certification test, please use standard product type name, i.e. TLP621 (GB): TLP621 TLP621 2 (GB): TLP621 2 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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