Product Information

TLP716(F)

TLP716(F) electronic component of Toshiba

Datasheet
High Speed Optocouplers IC cplr hi spd IFHL=6.5mA

Manufacturer: Toshiba
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Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

TLP716(F)
Toshiba

1 : USD 1.9627
10 : USD 1.2978
100 : USD 0.9825
500 : USD 0.8758
1000 : USD 0.7653
2500 : USD 0.756
5000 : USD 0.756
10000 : USD 0.7479
25000 : USD 0.7328
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Data Rate
Maximum Forward Diode Voltage
Maximum Reverse Diode Voltage
Maximum Power Dissipation
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Packaging
Output Type
Isolation Voltage
Vf - Forward Voltage
If - Forward Current
Vr - Reverse Voltage
Pd - Power Dissipation
Output Device
Brand
Forward Current
Fall Time
Maximum Continuous Output Current
Maximum Forward Diode Current
Number Of Channels Per Chip
Rise Time
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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TLP716 TOSHIBA Photocoupler IRED & Photo-IC TLP716 Unit: mm 4.580.25 Plasma display panel 6 5 4 High Speed Interface Factory Automation The TOSHIBA TLP716 consists of an infrared emitting diode and a high speed photodetector. This unit is 6-lead SDIP. TLP716 is 50% smaller than 8PIN DIP 1 2 3 and has suited the safety standard reinforced insulation class. So, mounting 7.620.25 area in safety standard required equipment can be reduced. Inverter Logic (totempole output) Package Type : SDIP6 1.270.2 1.250.25 Guaranteed Performance Over Temperature : -40 to 100C 0.40.1 9.70.3 Power Supply Voltage: 4.5 to 5.5 V Input Thresholds Current: IFHL = 6.5 mA (max) TOSHIBA 11-5J1S Propagation delay Time (tpHL/tpLH): 75 ns (max) Switching speed: 15 MBd (typ.) Weight: 0.26 g (typ.) Common mode transient immunity: 10 kV/ s (min) Pin Configuration (Top View) Isolation voltage: 5000 Vrms (min) UL-recognized: UL 1577, File No.E67349 1: ANODE V CC cUL-recognized: CSA Component Acceptance Service No.5A 1 6 2: N.C. File No.E67349 3: CATHODE 2 5 VDE-approved : EN 60747-5-5 , EN 62368-1 (Note 1) 4: GND GND 5: VO 4 3 SHIELD 6: VCC Note 1: When a VDE approved type is needed, please designate the Option(D4). Schematic Construction Mechanical Rating Creepage Distance 7.0 mm (min) Clearance 7.0 mm (min) Insulation Thickness 0.4 mm (min) Truth Table Input LED M1 M2 Output ON OFF ON L H L OFF ON OFF H Note: 0.1 F bypass capacitor must be connected between pins 6 and 4. Start of commercial production 2006-06 2019 1 2019-06-03 Toshiba Electronic Devices & Storage Corporation +0.15 3.65 6.80.25 -0.25 +0.10 0.25 -0.05 +0.25 4.0 -0.20 TLP716 Absolute Maximum Ratings (Ta=25C) CHARACTERISTIC SYMBOL RATING UNIT Forward Current (Ta 85C) I 20 mA F Forward Current Derating (Ta > 85C) I / Ta -0.5 mA/C F Peak Transient Forward Current (Note1) I 1 A FPT Reverse Voltage V 5 V R Diode power dissipation P 40 mW D Diode power dissipation derating (Ta >85C) P / Ta -1.0 mW/C D Junction Temperature T 125 C j Output Current (Ta 85C) I 10 mA O Output Current Derating (Ta > 85C) IO/ Ta -0.25 mA/C Output Voltage (V V ) V -0.5 to 6 V O CC O Supply Voltage V -0.5 to 6 V CC Power Dissipation (Ta 85C) P 40 mW C Power Dissipation Derating (Ta > 85C) P / Ta -1.0 mW/C C Junction Temperature T 125 C j Operating Temperature Range T -40 to 100 C opr Storage Temperature Range T -55 to 125 C stg Lead Solder Temperature(10 s) T 260 C sol Isolation Voltage (AC, 60 s, R.H. 60 %) (Note2) BV 5000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Pulse width PW 1 s, 300 pps. Note 2: Device Considered a two terminal device: pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted together. Recommended Operating Conditions CHARACTERISTIC SYMBOL MIN TYP. MAX UNIT Input Current, ON IF(ON) 8 12 18 mA Input Voltage, OFF VF(OFF) 0 0.8 V Supply Voltage (Note1)(Note2)(Note 3) VCC 4.5 5 5.5 V Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 1: This item denotes operating ranges, not meaning of recommended operating conditions. Note 2: The detector of this product requires a power supply voltage (V ) of 4.5 V or higher for stable operation. If CC the V is lower than this value, an I may increase, or an output may be unstable. Be sure to use the CC CC product after checking the supply current, and the operation of a power-on/-off. Note 3: A ceramic capacitor (0.1 F) should be connected from pin 6 to pin 4 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. 2019 2 2019-06-03 Toshiba Electronic Devices & Storage Corporation LED DETECTOR

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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