TLP759F TOSHIBA Photocoupler IRED+Photo IC TLP759F Digital Logic Ground Isolation Unit: mm Line Receiver Microprocessor System Interfaces Switching Power Supply Feedback Control Industrial Inverter The TOSHIBA TLP759F consists of a high output infrared emitting diode and a high speed detector of one chip photo diode transistor. This unit is 8-lead DIP. TLP759F has no internal base connection, and a Faraday shield integrated on the photodetector chip provides an effective common mode noise transient immunity. So this is suitable for application in noisy environmental condition. Isolation voltage: 5000 Vrms (min) Switching speed: t = 0.2 s (typ.) pHL TOSHIBA 11 10C402S t = 0.3 s (typ.) (R =1.9 k) pLH L Weight: 0.54 g (typ.) TTL compatible UL-recognized: UL 1577, File No.E67349 Pin Configuration (top view) cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349 1: N.C. 1 8 VDE-approved: EN 60747-5-5 (Note 1) 2: Anode 3: Cathode 2 7 4: N.C. Note 1: When a VDE approved type is needed, 5: Emitter(gnd) 3 6 6: Collector(output) please designate the Option (D4). 7: N.C. 8: Vcc 4 5 Mechanical Parameters SHIELD Creepage distance: 8.0 mm (min) Clearance: 8.0 mm (min) Schematic Insulation thickness: 0.4 mm (min) I CC I V F CC 8 2 I V O F 3 V O 6 GND Shield 5 Start of commercial production 1995-08 2019 1 2019-06-10 Toshiba Electronic Devices & Storage Corporation TLP759F Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 25 mA F Forward current derating (Ta 70C) IF / Ta -0.8 mA / C Pulse forward current (Note 1) I 50 mA FP Peak transient forward current (Note 2) I 1 A FPT Reverse voltage V 5 V R Diode power dissipation (Note 3) P 45 mW D Output current I 8 mA O Peak output current I 16 mA OP Output voltage V 0.5 to 20 V O Supply voltage V 0.5 to 30 V CC Output power dissipation P 100 mW O Output power dissipation derating (Ta 70C) Po / Ta -2 mW / C Operating temperature range T 55 to 100 C opr Storage temperature range T 55 to 125 C stg Lead solder temperature (10 s) (Note 4) T 260 C sol Isolation voltage (AC, 60 s, R.H. 60 %) (Note 5) BV 5000 Vrms S Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) 50 % duty cycle, 1 ms pulse width. Derate 1.6 mA / C above 70 C. (Note 2) Pulse width 1 s, 300 pps. (Note 3) Derate 0.9 mW / C above 70 C. (Note 4) Soldering portion of lead: Up to 2 mm from the body of the device. (Note 5) Device considered a two terminal device: Pins 1, 2, 3 and 4 shorted together and pins 5, 6, 7 and 8 shorted together. 2019 2 2019-06-10 Toshiba Electronic Devices & Storage Corporation Detector LED