TLP781/TLP781F TOSHIBA Photocoupler GaAs IRED & PhotoTransistor TLP781, TLP781F TLP781 Unit in mm Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP781 consists of a silicone phototransistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kV (min)). RMS TOSHIBA Weight: 0.25g (typ.) TLP781 : 7.62mm pitch type DIP4 TLP781F : 10.16mm pitch type DIP4 Unit in mm TLP781F Collector-emitter voltage: 80V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 5000V (min.) rms UL recognized: UL1577, file No. E67349 BSI approved: BS EN60065:2002 Approved no.8961 BS EN60950-1:2006 Approved no.8962 SEMKO approved:EN60065:2002 Approved no.800514 EN60950-1:2001, EN60335-1:2002 Approved no.800517 Option(D4)type VDE approved : DIN EN60747-5-2 TOSHIBA Certificate No. 40021173 (Note): When an EN60747-5-2 approved type is needed, Weight: 0.25g (typ.) Please designate Option (D4) Pin Configurations (top view) Construction mechanical rating 7.62mm Pitch 10.16mm Pitch 1 4 Standard Type TLPxxxF Type Creepage distance 6.5mm(min) 8.0mm(min) 2 3 Clearance 6.5mm(min) 8.0mm(min) Insulation thickness 0.4mm(min) 0.4mm(min) 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 1 2008-01-17 TLP781/TLP781F Current Transfer Ratio Current Transfer Ratio (%) Classi (I / I ) C F fication Type Marking Of Classification I = 5mA, V = 5V, Ta = 25C F CE (Note 1) Min Max (None) 50 600 Blank, Y, Y+, YE,G, G+, B, B+,BL,GB Rank Y 50 150 YE Rank GR 100 300 GR Rank BL 200 600 BL TLP781 Rank GB 100 600 GB Rank YH 75 150 Y+ Rank GRL 100 200 G Rank GRH 150 300 G+ Rank BLL 200 400 B (Note 1): Ex. rank GB: TLP781 (GB) (Note 2): Application type name for certification test, please use standard product type name, i. e. TLP781 (GB): TLP781 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Forward current I 60 mA F Forward current derating (Ta 39C) I / C 0.7 mA / C F Pulse forward current (Note 3) I 1 A FP Power dissipation P 100 mW D Power dissipation derating P / C 1.0 mW / C D Reverse voltage V 5 V R Junction temperature T 125 C j Collectoremitter voltage V 80 V CEO Emittercollector voltage V 7 V ECO Collector current I 50 mA C Power dissipation (single circuit) P 150 mW C Power dissipation derating P / C 1.5 mW / C C (Ta 25C)(single circuit) Junction temperature T 125 C j Operating temperature range T 55 to 110 C opr Storage temperature range T 55 to 125 C stg Lead soldering temperature (10s) T 260 C sol Total package power dissipation P 250 mW T Total package power dissipation derating P / C 2.5 mW / C T (Ta 25C) Isolation voltage (Note 4) BV 5000 S V rms (Note): Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 3): 100 s pulse, 100 Hz frequency (Note 4): AC, 1 min., R.H. 60%. Apply voltage to LED pin and detector pin together. 2 2008-01-17 Detector LED