Product Information

TLX9376(TPL,F

TLX9376(TPL,F electronic component of Toshiba

Datasheet
Logic Output Opto-couplers IC Coupler Automotive; AEC-Q101

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.5653 ea
Line Total: USD 5.57

8653 - Global Stock
Ships to you between
Mon. 20 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2181 - WHS 1


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1
1 : USD 3.9215
10 : USD 2.898
25 : USD 2.6565
100 : USD 2.438
250 : USD 2.2885
500 : USD 2.1045
1000 : USD 2.024
3000 : USD 1.9895
6000 : USD 1.955

     
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TLX9376 TOSHIBA PHOTOCOUPLER IRLED & PHOTO-IC TLX9376 HEV (Hybrid Electric Vehicle) Unit: mm and EV (Electric Vehicle) Applications The Toshiba TLX9376 consists of an infrared LED and integrated high gain, high-speed photodetector. The TLX9376 is housed in the SO6 package. It has a totem-pole output that can both sink and source current. The photodetector has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 15 kV/ s. TLX9376 guarantees minimum and maximum of propagation delay time, switching speed dispersion, and high common mode transient immunity. Input current logic LOW output : 4.0 mA (max) Switching Speed : tpHL = 35 ns (max) : tpLH = 35 ns (max) Common mode transient immunity : 15kV/ s (min) Operating Temperature : -40 to 125C Isolation voltage : 3750 Vrms (min) AEC-Q101 qualified JEDEC JEITA TOSHIBA 11-4L1 Weight: 0.08 g (typ.) Pin Configuration Schematic I CC V CC 6 IF IOIO 1 V O 5 3 1: ANODE 3: CATHODE GND SHIELD 4: GND 4 5: VO 6: VCC A ceramic capacitor (0.1 F) should be connected from pin 6 (VCC) to pin 4 (GND) to stabilize the operation of the high gain linear amplifier. Failure to Truth Table provide the bypass may impair the switching property. The total lead length between capacitor Input LED M1 M2 Output and coupler should not exceed 1 cm. ON OFF ON L H OFF ON OFF H L 2019 1 2019-06-28 Toshiba Electronic Devices & Storage Corporation TLX9376 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25C) Characteristic Symbol Rating Unit Forward Current I 25 mA F Forward Current (Ta=125 C) I 15 mA F Forward Current Derating (Ta 70 C) I /C -0.18 mA/C F Pulse Forward Current (Note 1) I 1 A FPT Input Power Dissipation PD 50 mW Input Power Dissipation Derating (Ta 110C) PD/C -1.73 mW/C Reverse Voltage V 5 V R Output Current I 10 mA O Output Voltage V 6 V O Supply Voltage (Note 2) V 6 V CC Output Power Dissipation P 40 mW O Output Power Dissipation Derating (Ta 110C) P /C -2.07 mW/C O Storage Temperature Range T -55 to 150 C stg Operating Temperature Range T -40 to 125 C opr Lead Soldering Temperature (10 s) T 260 C sol Isolation Voltage (AC,60 s.,R.H. 60 %) (Note 3) BV 3750 V S rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width 1 s, 300 pps Note 2: 60 s. (max) Note 3: This device is considered as a two terminal device: Pins 1 and 3 are shorted together, and pins 4, 5 and 6 are shorted together. Recommended Operating Conditions (Note) Characteristic Symbol Min Typ. Max Unit Input current logic LOW output I 4.5 - 10 mA F(ON) Input voltage logic HIGH output V 0 - 0.8 V F(OFF) Supply Voltage V 4.5 5 5.5 V CC Operating Temperature (Note 1) -40 - 125 C T opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 1: Denotes the operating range, not the recommended operating condition. 2019 2 2019-06-28 Toshiba Electronic Devices & Storage Corporation DETECTOR LED

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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