TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS ) TPCC8105 Lithium Ion Battery Applications Unit: mm Power Management Switch Applications Small footprint due to a small and thin package Low drain-source ON-resistance: R = 6.0 m (typ.)( V = 10 V) DS (ON) GS Low leakage current: I = 10 A (max) (V = 30 V) DSS DS Enhancement mode: V = 0.8 to 2.0 V (V = 10 V, I = 0.5 mA) th DS D Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-source voltage V 30 V DSS Drain-gate voltage (R = 20 k) V 30 V GS DGR Gate-source voltage V 25/+20 V GSS DC (Note 1) I 23 D Drain current A Pulsed (Note 1) IDP 69 Drain power dissipation (T = 25C) P 30 W c D Drain power dissipation (t = 10 s) P 1.9 W D (Note 2a) Drain power dissipation (t = 10 s) P 0.7 W D (Note 2b) Single-pulse avalanche energy E 138 mJ AS 1,2,3 :SOURCE 4:GATE (Note 3) 5,6,7,8:DRAIN Avalanche current I 23 A AR JEDEC Channel temperature T 150 C ch JEITA T 55 to 150 C Storage temperature range stg TOSHIBA 2-3X1A Note: For Notes 1 to 4, refer to the next page. Weight: 0.02 g (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Circuit Configuration reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the 8 7 6 5 absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2 3 4 Start of commercial production 2009-11 1 2018-05-15 2018 Toshiba Electronic Devices & Storage Corporation TPCC8105 Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case R 4.16 C/W th(ch-c) (T = 25C) c Thermal resistance, channel to ambient R 65.7 C/W th(ch-a) (t = 10 s) (Note 2a) Thermal resistance, channel to ambient R 178 C/W th(ch-a) (t = 10 s) (Note 2b) Marking 8 105 Part number Product-specific code Lot No. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2a: Device mounted on a glass-epoxy board (a) Note 2b: Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) glass-epox y board (a) glass-epox y board (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 200 H, RG = 1 , IAR = 23 A 2 2018-05-15 2018 Toshiba Electronic Devices & Storage Corporation