TPH1R306PL,L1Q(M Toshiba

TPH1R306PL,L1Q(M electronic component of Toshiba
TPH1R306PL,L1Q(M Toshiba
TPH1R306PL,L1Q(M MOSFETs
TPH1R306PL,L1Q(M  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TPH1R306PL,L1Q(M MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPH1R306PL,L1Q(M MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. TPH1R306PL,L1Q(M
Manufacturer: Toshiba
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 170W; SOP8A
Datasheet: TPH1R306PL,L1Q(M Datasheet (PDF)
Price (USD)
1: USD 6.8508 ea
Line Total: USD 6.85 
Availability : 0
  
QtyUnit Price
1$ 6.8508
3$ 2.9391
17$ 1.884

Availability 0
Ship by Wed. 26 Nov to Fri. 28 Nov
MOQ : 1
Multiples : 5000
QtyUnit Price
1$ 6.8508
3$ 2.9391
17$ 1.884

   
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TPH1R306PL,L1Q(M from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPH1R306PL,L1Q(M and other electronic components in the MOSFETs category and beyond.

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The TPH1R306PL,L1Q(M) is a NPN Silicon Epitaxial Planar Transistor from Toshiba. It is designed for general purpose amplifier, low frequency power amplifier and switching applications. The product features 200mA collector current, 300mW power dissipation, 100V Collector-Emitter Voltage, 800MHz Transition Frequency, and -60 to 150 Degrees Celsius Operating Junction Temperature.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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