X-On Electronics has gained recognition as a prominent supplier of TPH7R506NH,L1Q MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPH7R506NH,L1Q MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPH7R506NH,L1Q Toshiba

TPH7R506NH,L1Q electronic component of Toshiba
TPH7R506NH,L1Q Toshiba
TPH7R506NH,L1Q MOSFETs
TPH7R506NH,L1Q  Semiconductors

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See Product Specifications
Part No. TPH7R506NH,L1Q
Manufacturer: Toshiba
Category: MOSFETs
Description: N-Channel 60 V 22A (Ta) 1.6W (Ta), 45W (Tc) Surface Mount 8-SOP Advance (5x5)
Datasheet: TPH7R506NH,L1Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5000: USD 0.7422 ea
Line Total: USD 3711 
Availability - 0
MOQ: 5000  Multiples: 5000
Pack Size: 5000
Availability Price Quantity
0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 5000
Multiples : 5000
5000 : USD 1.0366
10000 : USD 1.0323
15000 : USD 1.0278
20000 : USD 1.0235
25000 : USD 1.019
30000 : USD 1.0145
40000 : USD 1.0099
50000 : USD 1.0052
100000 : USD 1.0005

0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 5000
Multiples : 5000
5000 : USD 0.7422
10000 : USD 0.6857

0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 1
Multiples : 1
1 : USD 1.85
10 : USD 1.5804
100 : USD 1.2322
500 : USD 1.0178
1000 : USD 0.8036
2000 : USD 0.75

0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 1
Multiples : 1
1 : USD 1.85
10 : USD 1.5804
100 : USD 1.2322
500 : USD 1.0178
1000 : USD 0.8036
2000 : USD 0.75

0
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 4.158
10 : USD 1.5525
100 : USD 1.1664
500 : USD 0.9601
1000 : USD 0.9191
5000 : USD 0.7808
10000 : USD 0.7646

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TPH7R506NH,L1Q from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPH7R506NH,L1Q and other electronic components in the MOSFETs category and beyond.

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TPH7R506NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH7R506NHTPH7R506NHTPH7R506NHTPH7R506NH 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Switching Voltage Regulators Motor Drivers DC-DC Converters 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small footprint due to a small and thin package (2) High-speed switching (3) Small gate charge: Q = 14 nC (typ.) SW (4) Low drain-source on-resistance: R = 6.1 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 60 V) DSS DS (6) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.3 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 60 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 55 A D Drain current (DC) (Note 1) I 22 D Drain current (pulsed) (t = 1 ms) (Note 1) I 66 DP Power dissipation (T = 25) P 45 W c D Power dissipation (t = 10 s) (Note 3) P 2.8 W D Power dissipation (t = 10 s) (Note 4) P 1.6 W D Single-pulse avalanche energy (Note 5) E 132 mJ AS Avalanche current I 22 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2011-11 2014-01-07 1 Rev.4.0TPH7R506NH 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25) R 2.78 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 44.6 /W th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) R 78.1 /W th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 24 V, T = 25 (initial), L = 0.38 mH, R = 1 , I = 22 A DD ch G AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-01-07 2 Rev.4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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