X-On Electronics has gained recognition as a prominent supplier of TPH8R80ANH,L1Q MOSFETs across the USA, India, Europe, Australia, and various other global locations. TPH8R80ANH,L1Q MOSFETs are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

TPH8R80ANH,L1Q Toshiba

TPH8R80ANH,L1Q electronic component of Toshiba
TPH8R80ANH,L1Q Toshiba
TPH8R80ANH,L1Q MOSFETs
TPH8R80ANH,L1Q  Semiconductors

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See Product Specifications
Part No. TPH8R80ANH,L1Q
Manufacturer: Toshiba
Category: MOSFETs
Description: Toshiba MOSFET N-Ch 120V 59A 61W UMOSVIII 2180pF 33nC
Datasheet: TPH8R80ANH,L1Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.3496 ea
Line Total: USD 4.35 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 5000
Multiples : 5000
5000 : USD 1.3316
10000 : USD 1.3258
15000 : USD 1.3197
20000 : USD 1.3137
25000 : USD 1.3076
30000 : USD 1.3014
40000 : USD 1.2952
50000 : USD 1.2889
100000 : USD 1.2825

0
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 4.3496
10 : USD 1.5741
25 : USD 1.4809
100 : USD 1.2635
250 : USD 1.2324
500 : USD 1.046
1000 : USD 0.8596
2500 : USD 0.8078

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
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We are delighted to provide the TPH8R80ANH,L1Q from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPH8R80ANH,L1Q and other electronic components in the MOSFETs category and beyond.

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TPH8R80ANH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH8R80ANHTPH8R80ANHTPH8R80ANHTPH8R80ANH 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications DC-DC Converters Switching Voltage Regulators Motor Drivers 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Small, thin package (2) High-speed switching (3) Small gate charge: Q = 13 nC (typ.) SW (4) Low drain-source on-resistance: R = 7.4 m (typ.) (V = 10 V) DS(ON) GS (5) Low leakage current: I = 10 A (max) (V = 100 V) DSS DS (6) Enhancement mode: V = 2.0 to 4.0 V (V = 10 V, I = 0.5 mA) th DS D 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 100 V DSS Gate-source voltage V 20 GSS Drain current (DC) (Silicon limit) (Note 1), (Note 2) I 59 A D Drain current (DC) (T = 25) (Note 1) I 32 c D Drain current (pulsed) (t = 1 ms) (Note 1) I 139 DP Power dissipation (T = 25) P 61 W c D Power dissipation (t = 10 s) (Note 3) P 2.8 W D Power dissipation (t = 10 s) (Note 4) P 1.6 W D Single-pulse avalanche energy (Note 5) E 79 mJ AS Avalanche current I 32 A AR Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2012-04 2014-02-18 1 Rev.2.0TPH8R80ANH 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance (T = 25) R 2.04 /W c th(ch-c) Channel-to-ambient thermal resistance (t = 10 s) (Note 3) R 44.6 /W th(ch-a) Channel-to-ambient thermal resistance (t = 10 s) (Note 4) R 78.1 /W th(ch-a) Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Limited by silicon chip capability. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: V = 60 V, T = 25 (initial), L = 0.084 mH, R = 1.0 , I = 32 A DD ch G AR Fig. Fig. Fig. Fig. 5.15.15.15.1 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Fig. Fig. Fig. Fig. 5.25.25.25.2 Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Device Mounted on a Glass-Epoxy Board (a)Board (a)Board (a)Board (a) Board (b)Board (b)Board (b)Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2014-02-18 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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