Product Information

TPHR9003NL,L1Q

TPHR9003NL,L1Q electronic component of Toshiba

Datasheet
N-Channel 30 V 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5)

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0139 ea
Line Total: USD 1.01

113 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6014 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 0.9246
10 : USD 0.7622
30 : USD 0.6791
100 : USD 0.5979
500 : USD 0.5504
1000 : USD 0.5246

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Factory Pack Quantity :
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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The TPHR9003NL,L1Q is an N-Channel 30 V, 60A (Tc) 1.6W (Ta), 78W (Tc) Surface Mount 8-SOP Advance (5x5) part manufactured by Toshiba. It has an RDS(ON) of 17.5 m? at VGS of 10 V. It is a power MOSFET that is used for higher switching frequencies, and is suitable for a variety of applications such as high-side and low-side switches, motor drivers, and movement control. The TPHR9003NL,L1Q is constructed with Toshiba's advanced DMOS technology and is optimized for high-side and low-side switching with low on-resistance and low gate charge. It also features high reliability, low gate charge, low output capacitance, and low thermal resistance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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TS4

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