Product Information

U1JU44(TE12R,Q)

U1JU44(TE12R,Q) electronic component of Toshiba

Datasheet
Diode Switching 600V 1A 2-Pin I-FLAT T/R

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

111: USD 0.3554 ea
Line Total: USD 39.45

0 - Global Stock
MOQ: 111  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 107
Multiples : 1
107 : USD 0.3561
250 : USD 0.336

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Max Surge Current
Packaging
Brand
Operating Temperature Range
Pin Count
Operating Temp Range
Rad Hardened
Rectifier Type
Rev Recov Time
Package Type
Peak Rep Rev Volt
Rev Curr
LoadingGif

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U1JU44 TOSHIBA SUPER FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE U1JU44 SWITCHING MODE POWER SUPPLY APPLICATIONS Unit: mm z Repetitive Peak Reverse Voltage : V = 600V RRM z Average Forward Current : I = 1.0A F (AV) z Very Fast ReverseRecovery Time : t = 100ns (Max) rr z Surface Mounting Plastic Mold Package ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Repetitive Peak Reverse Voltage V 600 V RRM Average Forward Current I 1.0 A F (AV) 15 (50Hz) Peak One Cycle Surge Forward I A FSM Current (NonRepetitive) 17 (60Hz) JEDEC Junction Temperature Range T 40 to 150 C j JEITA Storage Temperature Range T 40 to 150 C stg TOSHIBA 34D1A Weight: 0.06g Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAXUNIT Peak Forward Voltage V I = 1.0A 2.0 V FM FM Repetitive Peak Reverse Current I V = 600V 100 A RRM RRM Reverse Recovery Time t I = 1A, di / dt = 30A / s 100 ns rr F Forward Recovery Time t I = 1.0A 250 ns fr F MARKING STANDARD SOLDERING PAD Abbreviation Code Part No. JU U1JU44 1 2011-01-05 U1JU44 Handling Precaution The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. V : We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the RRM absolute maximum rating of V for a DC circuit and be no greater than 50% of that of V for RRM RRM an AC circuit. V has a temperature coefficient of 0.1%/C. Take this temperature coefficient into RRM account designing a device at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum rating F(AV) of I . Carry out adequate heat design. If you cant design a circuit with excellent heat radiation, F(AV) set the margin by using an allowable Tamax-I curve. F(AV) This rating specifies the non-repetitive peak current in one cycle of a 50-Hz sine wave, condition angle 180. Therefore, this is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. We recommend that a device be used at a Tj of below 120C under the worst load and heat radiation conditions. Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. Organic silicon is used as encapsulation material for this product, which is resin seal product. Therefore, it is difficult to seal siloxane coming from silicone completely in this product. When using this product, please consider above. Please refer to the Rectifiers databook for further information. 2 2011-01-05

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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