Product Information

TS1GSK64W6H

TS1GSK64W6H electronic component of Transcend

Datasheet
MEMORY, 8GB, SODIMM, DDR3, 1600MHZ

Manufacturer: Transcend
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 169.9784 ea
Line Total: USD 169.98

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

TS1GSK64W6H
Transcend

1 : USD 79.7918
5 : USD 71.6253
10 : USD 63.3304
50 : USD 58.7164

     
Manufacturer
Product Category
Brand
Ram Memory Size
Memory Speed
Module Memory
Ram Module Type
Memory Application
Svhc
Memory Capacity
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DDR3 SO-DIMM DDR3 SO-DIMM is high-speed, low power memory module that use DDR3 SDRAM in FBGA package and a 2048 bits serial EEPROM on a 204-pin printed circuit board. DDR3 SO-DIMM is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Features Pin Identification RoHS compliant products. Symbol Function JEDEC standard 1.5V 0.075V Power supply A0~A15, BA0~BA2 Address/Bank input VDDQ=1.5V 0.075V DQ0~DQ63 Data Input / Output. Clock Freq: 400MHZ for 800Mb/s/Pin DQS0~DQS7 Data strobes 533MHZ for 1066Mb/s/Pin /DQS0~/DQS7 Differential Data strobes 667MHZ for 1333Mb/s/Pin. CK0, /CK0,CK1, /CK1 Clock Input. (Differential pair) 800MHZ for 1600Mb/s/Pin CKE0, CKE1 Clock Enable Input. Programmable CAS Latency: 5, 6, 7, 8, 9 ,10 ,11 ODT0, ODT1 On-die termination control line Programmable Additive Latency (Posted /CAS): 0,CL-2 or CL-1 clock /CS0, /CS1 DIMM Rank Select Lines. Programmable /CAS Write Latency (CWL) /RAS Row Address Strobe = 5 (DDR3-800), 6 (DDR3-1066), 7 (DDR3-1333) , /CAS Column Address Strobe 8(DDR3-1600) /WE Write Enable 8 bit pre-fetch DM0~DM7 Data masks/high data strobes Burst Length: 4, 8 VDD Voltage power supply Internal calibration through ZQ pin On Die Termination with ODT pin V DQ/ V CA Power Supply for Reference REF REF Serial presence detect with EEPROM VDDSPD SPD EEPROM Power Supply Asynchronous reset I2C serial bus address select for SA0~SA2 EEPROM SCL I2C serial bus clock for EEPROM SDA I2C serial bus data for EEPROM VSS Ground /RESET Set DRAMs Known State VTT SDRAM I/O termination supply NC No Connection Dimensions (Unit: millimeter) Note: 1. Tolerances on all dimensions +/-0.15mm unless otherwise specified.

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