Product Information

TSF20N60MR

TSF20N60MR electronic component of Truesemi

Datasheet
MOSFET N Trench 600V 20A (Tc) 5V @ 250uA 400 mΩ @ 10A,10V TO-220F RoHS
Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9829 ea
Line Total: USD 0.98

1437 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
523 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

TSF20N60MR
Truesemi

1 : USD 1.0565
10 : USD 0.8785
50 : USD 0.7445
100 : USD 0.6565
500 : USD 0.6028
1000 : USD 0.5762

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The TSF20N60MR is a power MOSFET developed and manufactured by Truesemi. It is designed to provide efficient switching for high load-circuit applications. This device is a N-channel, Enhanced-Trench MOSFET with a maximum drain-source voltage (VDS) of 600V and a maximum drain current (ID) of 20A (Tc) at 5V @ 250uA 400mO @ 10A, 10V. The package is a TO-220F available in RoHS standard. It is optimized for power switching applications such as welding, motor control, lighting, and other applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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