NPN Silicon Phototransistor OP550, OP552, OP555, OP560, OP565, OP552 OP750 Series Features: OP550 OP555 Wide receiving angle OP560 OP565 OP750 OP755 Four sensitivity ranges OP770 OP775 Side-looking package Ideal for space-limited applications Ideal for PCBoard mounting Choice of clear, opaque or blue-tinted package Description: OP550, OP552, OP555, OP750, and OP770 series consists of a NPN silicon phototransistor molded in an epoxy package with a wide receiving angle that provides relatively even reception over a large area. The OP750 and OP770 have additional circuitry to enhance the operation of the device for stray light levels. OP560 and OP565 series consists of a NPN silicon photodarlington transistor molded in an epoxy package with a wide receiving angle that provides relatively even reception over a large area. The side-looking package design allows easy PCBoard mounting of slotted optical switches or optical interrupt detectors. The OP550, OP560, OP750 and OP770 devices have an external lens in a clear epoxy package. The OP552 device has an integral lens in an opaque plastic package that is optically transparent to infrared light but opaque to visible wavelengths. This feature allows the device to be used under high ambient light conditions or anywhere external light sources could interfere with the intended sensing application (visible light immunity). The OP555 and OP565 devices have an internal lens in a blue-tinted package. The lensing effect of this package allows an acceptance half-angle of 28 when measured from the optical axis to the half -power point. These devices are 100% production tested using infrared light for close correlation with OPTEK s GaAs and GaAIAs emitters. All of these sensors are mechanically and spectrally matched to the OP140, OP142, OP145, OP240 and OP245 series of infrared emitting diodes. Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data. For custom versions please contact your OPTEK representative. Applications: OP Applications requiring 55 = Phototransistor A = Highest sensitivity level wide receiving angle 56 = Photodarlington B = Sensitivity Level with Min. Max. Applications requiring C = Middle Sensitivity Level 75 = Phototransistor with R BE PCBoard mounting D = Lowest Sensitivity Level 77 = Phototransistor with C CE Space-limited applications Optical switches 0 = Extended Lens - Clear Package Optical interrupt detectors 2 = Extended Lens - Blue Tinted Package Optical encoders 5 = Integral Lens - Blue Tinted Package Non-contact position Available Part Numbers sensing OP550A OP552A OP555A OP560A OP565A OP750A OP755A OP770A OP775A Machine automation OP550B OP552B OP555B OP560B OP565B OP750B OP755B OP770B OP775B OP550C OP552C OP555C OP560C OP565C OP750C OP755C OP770C OP775C OP550D OP552D OP555D OP750D OP755D OP770D OP775D RoHS General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.optekinc.com www.ttelectronics.com considered accurate at time of going to print. Issue B 03/2019 Page 1 TT electronics plc NPN Silicon Phototransistor OP550, OP552, OP555, OP560, OP565, OP750 Series OP550, OP552, OP560, OP750, OP770 (A, B, C, D) MILLIMETERS DIMENSIONS ARE IN: INCHES OP555, OP565 (A, B, C, D) MILLIMETERS DIMENSIONS ARE IN: INCHES 2 OP555 - CONTAINS POLYSULFONE Pin Sensor To avoid stress cracking, we suggest using 1 Emitter ND Industries Vibra-Tite for thread-locking. Vibra-Tite evaporates fast without causing structural failure in 2 Collector OPTEK S molded plastics. 1 Notes: 1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when ofl w soldering. A maximum 20 grams force may b e applied to the leads when soldering. 2. For OP550, OP560, OP555 and OP565, derate linearly 1.33 mW/ C above 25 C. For OP552, derate linearly 1.25 mW/ C above 25 C. 3. For all phototransistors in this series, the light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm . For OP550 and OP555 only, a radiometric intensity level that varies less than 10% over the entire lens surface of the phototransistor being tested applies. (0.040 T - 3.4) 4. To calculate typical collector dark current in A, use the formula I =10 , where T is ambient temperature in C. CEO A A General Note OPTEK Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Carrollton, TX 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.optekinc.com www.ttelectronics.com considered accurate at time of going to print. Issue B 03/2019 Page 2 TT electronics plc