Product Information

OPB100-EZ

OPB100-EZ electronic component of TT Electronics

Datasheet
Infrared Emitters Infrared 890nm Emitter
Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.9905 ea
Line Total: USD 3.99

912 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1844 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 300
Multiples : 300

Stock Image

OPB100-EZ
TT Electronics

300 : USD 4.75
600 : USD 4.5125
1200 : USD 4.2875
2400 : USD 4.075

912 - WHS 2


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

OPB100-EZ
TT Electronics

1 : USD 3.9905
100 : USD 3.8065

1746 - WHS 3


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 300
Multiples : 300

Stock Image

OPB100-EZ
TT Electronics

300 : USD 6.543
600 : USD 6.1027
1200 : USD 5.6948

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Wavelength
Power Rating
Minimum Operating Temperature
Maximum Operating Temperature
Package / Case
Illumination Color
Brand
Forward Current
Lens Shape
Fall Time
Rise Time
Factory Pack Quantity :
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Additional Infomation About Product

Infrared LED emitter Silicon phototransistor sensor Snap-in mounting Variable sensing distance over 36 (91.4 cm) Low profile package 24 (61.0 cm) wire leads The OPB100Z series consists of an infrared LED (OPB100-EZ) and phototransistor (OPB100-SZ) in separate plastic housings. The low cost, snap-in design requires no screws or other mounting hardware for ease of installation. The emitter and sensor are not apertured, which allows separation distances in excess of 36 (91.4 cm) without concern for precise alignment. The front side clip allows mounting of the product to any 0.059 (1.50 mm) thick material. This product is designed for general switching and low-speed data communications applications. Ordering Information Part LED Peak Lead Length / Non-contact reflective object Number Wavelength Sensor Spacing Non-contact interruptive sensing Assembly line automation OPB100-EZ 880 nm 24 / 26 AWG Machine automation Wire Machine safety OPB100-SZ Transistor Emiett r (LED) OPB100Z Contains both OPB100-EZ & OPB100-SZ Phototransistor Red White Hole Pattern Hole Pattern Black Green 0.190 4.83 26 AWG Symbolize Cover UL Rated Hole Pattern 0.335 8.51 0.150 3.81 Absolute Maximum Ratings (T = 25 C unless otherwise noted) A o o Storage Temperature Range -40 C to +85 C (1) o o Operating Temperature Range -40 C to +80 C Input LED (OP298 for additional information) Forward DC Current 100 mA Peak Forward Current (1 s pulse width, 300 pps) 1 A Reverse DC Voltage 2 V (2) Power Dissipation 142 mW Output Phototransistor (OP598 for additional information) Collector-Emitter Voltage 30 V Emitter -Collector Voltage 5 V Collector DC Current 50 mA (3) Power Dissipation 250 mW Electrical Characteriscti s (T = 25 C unless otherwise noted) A Input Diode (See OP298 for additional information for reference only) V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - 15 A V = 10 V R R q Emission Angle at Half Power Points - 25 - Degree I = 20 mA HP F I = 100 mA F mW/ E (APT) Apertured Radiant Intensity 6.5 - - Distance = 1.43 (3.63 cm) E 2 cm Aperture = 0.25 (6.35 mm) Output Phototransistor (See OP598 for additional information for reference only) 2 V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA, E = 0mw/cm (no light) (BR)CEO C E 2 V Emitter -Collector Breakdown Voltage 5 - - V I = 100 A, E = 0mw/cm (no light) (BR)ECO C E 2 V = 10V, I = 0, E = 0 mw/cm CE F E I Collector Dark Current - - 100 nA CEO (no light) 2 V Collector-Emitter Saturation Voltage - - 0.4 V I = 400 A, E = 1.7 mw/cm CE(SAT) C E 2 I On-State Collector Current 5 - - mA V = 5 V, E = 1.7 mw/cm C(ON) CE E Notes: 1. Derate linearly 3.33 mW/C above 25C. 2. All parameters measured using pulse technique. 3. Derate linearly 1.43 mW/C above 25C.

HS Compliance

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

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