Slotted Optical Switch OPB804 Features: Non-contact switch PCB mount Wide aperture Opaque body to minimize sensitivity to ambient light Description: OPB804 is a non-contact optical switch with a NPN silicon phototransistor and infrared Light Emitting Diode (LED) which are mounted on opposite sides of a 0.155 ( 3.94 mm) wide slot. The device body is a single molded piece opaque plastic that reduces ambient light interference. A wide open aperture makes it versatile for general applications. LED emissions are near-infrared (850 940nm). Applications: Non-contact object sensing Assembly line automation Machine automation Equipment security Machine safety DIMENSIONS ARE IN INCHES AND MILLIMETERS TOLERANCES ARE .010 0.25 UNLESS OTHERWISE STATED RoHS General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue B 11/2016 Page 1 TT electronics plc Slotted Optical Switch OPB804 Electrical Specifications Absolute Maximum Ratings (T = 25 C unless otherwise noted) A Storage Temperature Range -40C to +100 C Operating Temperature Range -40C to +85 C ( 5) Lead Soldering Temperature 260 C Input Diode ( 7) Input Diode Power Dissipation 75 mW ( 7) Input Diode Forward D.C. Current, T = 25C 50 mA A Input Diode Peak Forward Pulse Current, T = 25C (1s pulse width, 300pps) 1 A A Phototransistor ( 7) Power Dissipation 100 mW Collector - Emitter Voltage 30V Emitter - Collector Voltage 5.0V Electrical Characteriscti s ( T = 25C ) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (see OP140 or OP240 for additional information) V Forward Voltage - 1.25 1.70 V I = 20 mA F F I Reverse Current - - - - Not designed for reverse operation R Output Phototransistor (see OP550 for additional information) 2 V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA, E = 0 mw/cm (BR)CEO C E 2 V Emitter -Collector Breakdown Voltage 5.0 - - V I = 100 A, E = 0 mw/cm (BR)ECO E E 2 I Collector Dark Current - - 100 nA V = 10 V, I = 0, E = 0 mw/cm CEO CE F E Coupled V Collector-Emitter Saturation Voltage - - 0.40 V I = 250 A, I = 20 mA CE(SAT) C F I On-State Collector Current 0.5 5 - mA V = 10 V, I = 20 mA C(ON) CE F Notes: (1) Dot indicates 3 collector lead side. (2) Feature controlled at body. (3) Cathode lead may be shorter. (4) RMA flux recommended. Highly acvti ated water soluble fluxes may attack plascti . Recommend trial to verify application. (5) Maximum lead soldering temperature .060 1.6mm from case for 5 seconds with soldering iron. (6) Plascti is soluble in chlorinated hydrocarbons and ketones. Methanol or isopropanol are recommended as cleaning agents. (7) Derate linearly 1.67 mW/C above 25 C. (8) All parameters tested using pulse techniques. (9) Do not connect input diode directly to a voltage source without an external current limingti resistor. (10) Do not apply reverse voltage to LED. LED will be a 0V in reverse voltage and draw current as if a short. General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue B 11/2016 Page 2 TT electronics plc