Slotted Optical Switch OPB816Z Features: 0.20 (5.1 mm) wide gap, 0.61 (15.5 mm) deep slot Wire length 24 (609 mm) minimum, 26 AWG Product Photo Here Dust protection Two mounting tabs Description: The OPB816Z slotted switch consists of an infrared emitting diode and an NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. Switching of the phototransistor occurs whenever an opaque object passes through the slot. The OPB816Z has an 0.61 (15.5 mm) deep slot allowing for a longer reach of the optical center line from the mounting plane. The phototransistor internal apertures are 0.010 x 0.06 (0.25 mm x 1.52 mm) on the sensor side (S) and 0.05 x 0.06 (1.27 mm x 1.52 mm) on the emitter side (E). Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Applications: Ordering Information Non-contact object Part Number Description sensing Assembly line OPB816Z Slotted switch automation Machine automation Equipment security Machine safety Color/Pin Description Red Anode 1 4 Black Cathode Green Emitter White Collector 2 3 MILLIMETERS DIMENSIONS ARE IN: INCHES OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A.1 12/05 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 3 Slotted Optical Switch OPB816Z Absolute Maximum Ratings (T =25C unless otherwise noted) A Storage & Operating Temperature Range -40C to +85 C (1) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260 C Input Diode (see OP140 for additional information) Forward DC Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 3 A Reverse DC Voltage 2 V (2) Power Dissipation 100 mW Output Phototransistor (See OP552 for additional information) Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Collector DC Current 30 mA (2) Power Dissipation 100 mW Electrical Characteristics (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (see OP140 for additional information) V Forward Voltage - - 1.8 V I = 20 mA F F I Reverse Current - - 100 A V = 2 V R R Output Phototransistor (see OP552 for additional information) V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA, I = 0, E = 0 (BR)(CEO) C F E V Emitter-Collector Breakdown Voltage 5 - - V I = 100 A, I = 0, E = 0 (BR)(ECO) E F E I Collector-Emitter Leakage Current - - 100 nA V = 10 V, I = 0, E = 0 CEO CE F E Coupled I On-State Collector Current 1.0 - 10.0 mA V = 5 V, I = 20 mA C(ON) CE F V Collector-Emitter - - 0.4 V I = 100 A, I = 20 mA CE(SAT) C F Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.67 mW/C above 25 C. (3) All parameters are tested using pulse techniques. (4) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. (5) Clear dust protection over emitter and sensor apertures. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A .1 12/05 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 3 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com