OPB818

Slotted Optical Switch OPB818 Features: Choice of aperture Choice of opaque or IR transmissive shell material Non-contact switching Mounts directly to PCBoard or dual-in-line socket 0.400 (10.16 mm) lead spacing 0.200 (5.08 mm) slot width. 0.250 (6.35 mm) slot depth Description: The OPB818 slotted switch consists of an infrared emitting diode and an NPN silicon phototransistor mounted in a low -cost black plastic housing on opposite sides of a 0.200 (5.080 mm) wide slot. Switching of the phototransistor occurs whenever an opaque object passes through the slot. The OPB818 is designed for direct soldering into PCBoards or for mounting in standard dual -in-line sockets and has an 0.25 (6.35 mm) deep and 0.20 (5.08 mm) wide slot. The apertures are 0.033 (0.84 mm) in diameter on both the sensor side (S) as well as on the emitter side (E). Applications: Ordering Information Non-contact object sensing Part Description Number Assembly line automation Machine automation Slotted Optical Switch Equipment security OPB818 (mounts directly to PCBoards Machine safety or to dual-in-line socket) Pin Description Pin Description 1 Anode 4 Collector 2 Cathode 3 Emitter 1 4 2 3 MILLIMETERS DIMENSIONS ARE IN: INCHES General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue C 11/2016 Page 1 TT electronics plc Slotted Optical Switch OPB818 Electrical Specifications Absolute Maximum Ratings (T =25C unless otherwise noted) A Storage & Operating Temperature Range -40C to +85 C (1) Lead Soldering Temperature 1/16 inch (1.6 mm) from the case for 5 sec. with soldering iron 260 C Input Diode Forward DC Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 1 A (2) Power Dissipation 75 mW Output Phototransistor Collector-Emitter Voltage 30 V Emitter -Collector Voltage 5 V Collector DC Current 30 mA (2) Power Dissipation 100 mW Electrical Characteriscti s (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (see OP240 for additional information) V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - - - Not designed for reverse operation R Output Phototransistor (see OP550 for additional information) V Collector-Emitter Breakdown Voltage 30 - - V I =1 mA (BR)(CEO) C V Emitter -Collector Breakdown Voltage 5 - - V I = 100 A (BR)(ECO) E I Collector-Emitter Leakage Current - - 100 nA V = 10 V, I = 0, E = 0 CEO CE F E Coupled I On-State Collector Current 100 - - A V = 10 V, I = 20 mA C(ON) CE F V Collector-Emitter Saturation Voltage - - 0.4 V I = 50 A, I = 20 mA CE(SAT) C F Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when ofl w soldering. (2) Derate linearly 1.67 mW/C above 25 C. (3) All parameters were tested using pulse techniques. (4) Leads are 0.20 square (5.080 mm) and 0.425 long (10.80 mm), minimum. (5) Methanol or isopropanol are recommended as cleaning agents. Plascti housing is soluble in chlorinated hydrocarbons and keton es. Spray and wipe do not submerge. (6) Polarity is denoted by color of housing top: LED (gray or clear), sensor (black). (7) Do not apply reverse voltage to LED. LED will be a 0V in reverse voltage and draw current as if a short. General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue C 11/2016 Page 2 TT electronics plc