Slotted Optical Switch OPB819Z Features: Non-contact switching 24 (609 mm) long wire leads 1.25 ( 31.75 mm) wide slot, 1.38 (35.05 mm) deep slot Description: The OPB819Z slotted switch consists of an infrared emitting diode and an NPN silicon phototransistor mounted in an opaque housing with clear windows for dust protection. Switching of the phototransistor occurs whenever an opaque object passes through the slot. The OPB819Z has an 1.38 (35.05 mm) deep and 1.25 (31.75 mm) wide slot allowing for a longer reach of the optical center line from the mounting plane. The switch housing is designed to use the lens of each component as the optical aperture resulting in an equivalent aperture diameter of 0.06 (1.52 mm). Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Applications: Color / Color / Non-contact object sensing Pin Description Pin Description Assembly line automation Red-1 Anode White-3 Collector Machine automation Black-2 Cathode Green-4 Emitter Equipment security Machine safety 1 3 2 4 MILLIMETERS DIMENSIONS ARE IN: INCHES Ordering Information CONTAINS POLYSULFONE Slot Aperture Lead To avoid stress cracking, we suggest using Part LED Peak Width / Emitter/ Length / ND Industries Vibra-Tite for thread-locking. Number Wavelength Sensor Depth Sensor Spacing Vibra-Tite evaporates fast without causing structural failure in OPTEKs molded plastics. 24 / 26 OPB819Z 890 nm Transistor 1.26 / 1.38 None AWG Wire OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A.3 06/07 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 3 Slotted Optical Switch OPB819Z Absolute Maximum Ratings (T =25C unless otherwise noted) A Storage & Operating Temperature Range -40 C to +85 C (1) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260 C Input Diode Forward DC Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 3 A Reverse DC Voltage 2 V (2) Power Dissipation 100 mW Output Phototransistor Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Collector DC Current 30 mA (2) Power Dissipation 100 mW Electrical Characteristics (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode V Forward Voltage - - 1.8 V I = 20 mA F F I Reverse Current - - 100 A V = 2.0 V R R Output Phototransistor V Collector-Emitter Breakdown Voltage 30 - - V I = 100 A, I = 0, E = 0 (BR)(CEO) C F E V Emitter-Collector Breakdown Voltage 5 - - V I = 100 A, I = 0, E = 0 (BR)(ECO) E F E I Collector-Emitter Leakage Current - - 100 nA V = 10 V, I = 0, E = 0 CEO CE F E Coupled I On-State Collector Current 0.5 - 12.0 mA V = 5 V, I = 40 mA C(ON) CE F V Collector-Emitter Saturation Voltage - - 0.4 V I = 250 A, I = 40 mA CE(SAT) C F Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.67 mW/C above 25 C. (3) All parameters tested using pulse techniques. (4) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. Spray and wipe. Do not submerge. (5) Polarity is denoted by color the wires: LED (AnodeRed, CathodeBlack) Phototransistor (CollectorWhite, EmitterGreen). OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.3 06/07 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 3 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com