Slotted Optical Switch OPB847, OPB848 Features: Non-contact switching Apertured for high resolution Product Photo Here Hermetically sealed components Description: The OPB847 and OPB848 consists of a gallium aluminum arsenide LED and a silicon phototransistor, which is soldered into a printed PCBoard and mounted in a high-temperature plastic housing on opposite sides of a 0.100 inch (2.540 mm) wide slot. Both device types have a .025 (0.635mm) inch by .060 inch (1.524 mm) aperture in front of the phototransistor for high resolution positioning sensing. Phototransistor switching takes place when an opaque object passes through the slot. Applications: LED Peak Slot Width / Aperture Lead Length / Part Number Wavelength Sensor Depth Emitter/Sensor Spacing Non-contact interruptive object sensing Assembly line automation OPB847 Machine automation 890 nm Transistor 0.100 / 0.2 50 0.025 / 0.025 0.425 / 0.300 OPB848 Equipment security Machine safety 1 4 2 3 Pin Description 1 Anode 2 Cathode 3 Emitter 4 Collector MILLIMETERS DIMENSIONS ARE IN: INCHES OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue A.1 7/09 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 3 Slotted Optical Switch OPB847, OPB848 Absolute Maximum Ratings (T = 25 C unless otherwise noted) A Operating and Storage Temperature Range -40 C to +85 C Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 240 C Input Diode Forward DC Current 50 mA Reverse Voltage 2.0 V (2) Power Dissipation 100 mW Output Phototransistor Collector-Emitter Voltage 30 V Emitter-Collector Voltage 7 V (2) Power Dissipation 100 mW Electrical Characteristics (T = 25 C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode 1.00 1.35 1.70 I = 20 mA F (4) V Forward Voltage 1.20 1.55 1.90 V I = 20 mA, T = -55 C F F A 1.80 1.20 1.60 I = 20 mA, T = 100 C F A I Reverse Current - 0.10 100 A V = 2 V R R Output Phototransistor V Collector-Emitter Breakdown Voltage 30 110 - V I = 100 A, I = 0 (BR)CEO C F V Emitter-Collector Breakdown Voltage 5 10 - V I = 100 A, I = 0 (BR)ECO E F - 0.20 100 nA V = 10 V, I = 0 CE F I Collector-Emitter Dark Current CEO - 10 100 A V = 10 V, I = 0, T = 100 C CE F A Notes: (1) Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.00 mW/ C above 25 C. (3) Methanol and isopropanol are recommended as cleaning agents. (4) Measurement is taken during the last 500 s of a single 1.0 ms test pulse. Heating due to increased pulse rate or pulse width can cause change in measurement results. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue A.1 7/09 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 3 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com