Slotted Optical Switch OPB854A1, OPB854A2, OPB854A3, OPB854B1, OPB854B2, OPB854B3 OPB854A1 Features: OPB854B1 Opaque housing material for ambient light rejection Non-contact switching Printed circuit board mounting, lead spacing 0.300 (7.62 mm) OPB854A2 Slot width 0.100 (2.54 mm) OPB854B2 Choice of three mounting configurations OPB854A3 OPB854B3 Description: Each OPB854 series contains an Infrared Light Emitting Diode (LED) and an NPN silicon phototransistor mounted on opposite sides of a 0.100 (2.54 mm) wide slot in an opaque plastic housing. The OPB854 series has an equivalent aperture of 0.60 (1.52 mm) in diameter because of the lens on the emitting an sensing devices. The difference between the OPB854A series and OPB854B series are electrical characteristics. Switching of the phototransistor occurs whenever an opaque object passes through the slot. Applications: Non-contact interruptive object sensing Assembly line automation Machine automation Equipment security Machine safety Ordering Information LED Peak Slot Width / Aperture Lead Length / Part Number Wavelength Sensor Depth Emitter/Sensor Spacing OPB854A1 OPB854B1 OPB854A2 890 nm Transistor 0.100 / 0.250 None 0.400 / 0.300 OPB854B2 OPB854A3 OPB854B3 General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue B 3/2018 Page 1 TT electronics plc Slotted Optical Switch OPB854A1, OPB854A2, OPB854A3, OPB854B1, OPB854B2, OPB854B3 Electrical Specifications Absolute Maximum Ratings (T =25C unless otherwise noted) A Storage & Operating Temperature Range -40 C to +85 C (1) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260 C Input Diode Forward DC Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 3 A Reverse DC Voltage 2 V (2) Power Dissipation 100 mW Output Phototransistor Collector-Emitter Voltage 30 V Emitter -Collector Voltage 5 V Collector DC Current 30 mA (2) Power Dissipation 100 mW Electrical Characteriscti s (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (see OP140 for additional information) V Forward Voltage - - 1.7 V I = 20 mA F F I Reverse Current - - 10 A V = 2 V R R Output Phototransistor (see OP550 for additional information) V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA (BR)CEO C V Emitter -Collector Breakdown Voltage 5 - - V I = 100 A (BR)ECO E I Collector Dark Current - - 100 nA V = 10 V, I = 0, E = 0 CEO CE F E Combined Collector-Emitter Saturation Voltage V OPB854A series - - 0.6 I = 2 mA, I = 16 mA CE(SAT) C F V OPB854B series - - 0.4 I = 250 A, I = 20 mA C F On-State Collector Current I OPB854A series 3 - - V = 1 V, I = 16 mA C(ON) CE F mA OPB854B series 1 - - V = 10 V, I = 20 mA CE F Notes: (1) RMA flux is recommended. Duraoti n can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.67 mW/C above 25 C. (3) All parameters tested using pulse techniques. (4) Lead spacing of 0.220 (5.59 mm) or 0.320 (8.13 mm) is available. Leads are 0.20 sq. (5.1 mm) and 0.425 (10.8 mm) long (minimum). (5) Methanol or isopropanol are recommended as cleaning agents. Plascti housing is soluble in chlorinated hydrocarbons and keton es. (6) Polarity is denoted by color of housing top (gray or clear LED, black sensor). General Note TT Electronics Optek Technology, Inc. TT Electronics reserves the right to make changes in product specificaoti n without 1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 Ph: +1 972 323 2200 nocti e or liability. All informaoti n is subject to TT Electronics own data and is www.ttelectronics.com sensors ttelectronics.com considered accurate at time of going to print. Issue B 3/2018 Page 2 TT electronics plc