Slotted Optical Switch OPB857Z Features: Three wires for economy in electrical connection Water resistant, no optical openings in upper plastic body Internal narrow aperture for high motion resolution Description: OPB857Z is a non-contact optical switch with a NPN silicon phototransistor and infrared Light Emitting Diode (LED) which are mounted on opposite sides of a 0.150 ( 3.8 mm) wide slot. The device upper body is a single molded piece IR transparent plastic that is tinted to reduce ambient light interference and offers water resistance as well as dirt/dust protection. The phototransistor has a internal aperture that offers good optical resolution. LED emissions are near-infrared (850 940nm). Custom electrical, wire and cabling services are available. Contact your local representative or OPTEK for more information. Compliant to EU RoHS Directive 2002/95/EC. Applications: Non-contact object sensing Assembly line automation Machine automation Equipment security Machine safety Wire Color Description Red Collector Brown Anode Black Common Notes: (1) Wire is 26AWG, UL Rated PVC insulation. (2) Ideal torque for bolt or screw 0,45 to 0,68 Nm ( 4 to 6 Lb-in ). (3) When using a thread lock compound, ND Industries ND Vibra-Tite Formula 3 will avoid stress cracking plastic. (4) Plastic is soluble in chlorinated hydrocarbons and ketones. Methanol or isopropanol are recommended as cleaning agents. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue B.1 02/10 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 3 Slotted Optical Switch OPB857Z Absolute Maximum Ratings Storage & Operating Temperature Range -40C to +80 C Input Diode ( 5) Input Diode Power Dissipation 100 mW ( 5) Input Diode Forward D.C. Current, T = 25C 50 mA A Input Diode Peak Forward Pulse Current, T = 25C (1s pulse width, 300pps) 1 A A Input Diode Reverse D.C. Voltage, T = 25C 2 V A Phototransistor ( 5) Power Dissipation 100 mW Collector - Emitter Voltage 30V Emitter - Collector Voltage 5.0V Electrical Characteristics ( T = 25C ) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (see OP140 or OP240 for additional information) V Forward Voltage - - 1.70 V I = 20 mA F F I Reverse Current - - 100 A V = 2 V R R Output Phototransistor (see OP550 for additional information) V Collector-Emitter Breakdown Voltage 30 - - V I = 1 mA, E = 0 (BR)CEO C E V Emitter-Collector Breakdown Voltage 5.0 - - V I = 100 A, E = 0 (BR)ECO E E I Collector Dark Current - - 100 nA V = 10 V, I = 0, E = 0 CEO CE F E Coupled V Collector-Emitter Saturation Voltage - - 0.40 V I = 1.50 mA, I = 20 mA CE(SAT) C F I On-State Collector Current 1.5 - 17.0 mA V = 10 V, I = 20 mA C(ON) CE F Notes: (5) Derate linearly 1.67 mW/C above 25 C. (6) All parameters tested using pulse techniques. OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Issue B.1 02/10 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 3 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com