Product Information

5N65L-TF1-T

5N65L-TF1-T electronic component of Unisonic

Datasheet
MOSFET N Trench 650V 5A (Tc) 4V @ 250uA 2.4 Ω @ 2.5A,10V TO-220F (TO-220IS) RoHS

Manufacturer: Unisonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2327 ea
Line Total: USD 0.23

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

5N65L-TF1-T
Unisonic

1 : USD 0.2063
10 : USD 0.1279
50 : USD 0.0786
100 : USD 0.0685
500 : USD 0.0638
1000 : USD 0.0611

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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TechnologiesThe 5N65L-TF1-T is a power MOSFET manufactured by Unisonic Technologies. This MOSFET is rated for 5 A of continuous drain current and a maximum voltage of 650 V. It is produced using trench technology which results in a lower on-resistance than same-sized devices using planar technology. This part is also RoHS compliant, meaning that it meets strict environmental standards for hazardous materials. The package for the part is a TO-220F, also known as a TO-220IS. It has a Gate-Source Voltage of 10 V and a maximum Gate-Source Threshold Voltage of 4 V, at an Id-Vgs of 250 µA. Additionally, it has a drain-source resistance of 2.4 O at 2.5 A.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Unisonic Tech
UTC(Unisonic Tech)

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