CHA3666-QAG United Monolithic Semiconductors

CHA3666-QAG RoHS COMPLIANT 5.8-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3666-QAG is a two-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in lead-free package. Gain & NF @Config; P1=N2=grounded 24 22 Main Features 20 18 16 14 Broadband performance 6-17GHz 12 1.8dB noise figure 10 rd 8 26dBm 3 order intercept point 6 4 16dBm power at 1dB compression 2 21dB gain 0 Low DC power consumption 4 6 8 10 12 14 16 18 20 16L-QFN3X3 SMD package Frequency (GHz) Main Characteristics Temp = +25C, Vd1=Vd2= +4V, P1& N2=GND Symbol Parameter Min Typ Max Unit NF Noise figure 1.8 2 dB G Gain 19 21 dB IP3 3rd order intercept point 26 dBm ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSCHA3666-QAG8108 - 17 Apr 08 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Dpartementale 128 - BP46 - 91401 Orsay Cedex France Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09 Gain &NF (dB)5.8-17GHz Low Noise Amplifier CHA3666-QAG Electrical Characteristics Temp = +25C, P1, N2 = GND (1) Symbol Parameter Min Typ Max Unit Fop Operating frequency range 5.8 17 GHz G Gain (2) 19 21 dB Gain flatness 0.5 dB G NF Noise figure (2) 1.8 2 dB IS11I Input return loss (2) 2.5:1 2.7:1 IS22I Ouput return loss (2) 2.0:1 2.2:1 IP3 3rd order intercept point 26 dBm P1dB Output power at 1dB gain comp (2)(3). 15 16 dBm Vd1, 2 Drain bias voltage 4 V Id Drain bias current 60 80 100 mA (1) The other leads are not connected. (2) These values are representative of on board measurements as defined on the drawing 96272 (see below). (3) P1dB can be increased (+0.5dBm) when P1& P2 are connected to ground and the other leads non-connected. In this case Id is typically of 85mA. Absolute Maximum Ratings (1) Temp = +25C Symbol Parameter Values Unit Vd Drain bias voltage 4.5 V Pin RF input power 10 dBm Top Operating temperature range -40 to +85 C Tj 175 C Junction temperature Tstg Storage temperature range -55 to +125 C (1) Operation of this device above anyone of these paramaters may cause permanent damage. Ref. DSCHA3666-QAG8108 - 17 Apr 08 2/12 Specifications subject to change without notice Route Dpartementale 128, BP46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09