US-Lasers: 808nm-5mW - Infrared Laser Diode and Infrared Diode Laser Module Page 1 of 1
US-Lasers: 808nm-5mW - Infrared Laser Diode
Back to Laser Diodes
INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - (Tc=25 C)
TECHNICAL DATA for LASER DIODE
z Index Guided MQW Structure
z Wavelength: 808nm (Typ.)
z Optical Power: 5mW CW
z Threshold Current: 25mA (Typ.)
z Standard Package: 5.6mm
Infrared light output 808nm
Pin Out Diagram - Style A
Optical power output 5mW CW
Package Type 5.6mm
Built-in photo diode for monitoring laser output
Items Symbols Values Unit
Optical output power Po 5 mW
Laser diode reverse voltage VLDR 2 V
Photo diode reverse voltage VPDR 30 V
Operating temperature Topr -10 ~ +40 C
Storage temperature Tstg -40 ~ +85 C
OPTICAL and ELECTRICAL CHARACTERISTICS - (Tc=25 C)
Items Symbols Min. Typ. Max. Unit Test Condition
Optical output power Po - 5 - mW -
Threshold current Ith 10 20 35 mA -
Operating current Iop 15 25 45 mA Po=5mW
Operating voltage Vop 1.9 2.1 2.5 V Po=5mW
Lasing wavelength 8 D 800 808 820 nm Po=5mW
Beam divergence F 8 11 15 deg Po=5mW
Beam divergence z 20 35 45 deg Po=5mW
Slope Efficiency (mW/mA) 0 0.1 0.3 0.6 -
Monitor current Im 10 100 200 Po=5mW,Vr=5V
A
Astigmatism As - 11 - Po=5mW
m
3000-5,000
MTTF Po=5mW,NA=0.4
hrs.
Emitter Size 1 x 4 Microns
Emitter Distance to Cap Lens 0.3mm
Structure Index Guided
X-ON Electronics
Largest Supplier of Electrical and Electronic Components
Click to view similar products for us-lasers manufacturer:
Other Similar products are found below :
HK-10.4 D8085I HK-6.4 VOL7805I MM8505I NS102-200K THAD 5.6-9MM VOL6505I M8085I D8505I M7805I AD 5.6-9MM
NS102A-200K M6355I D6355I M8505I M6505I D405-120 D7805I D405-20 MM6505I