X-On Electronics has gained recognition as a prominent supplier of SI3477DV-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3477DV-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI3477DV-T1-GE3 VBsemi Elec

Name: SI3477DV-T1-GE3
Brand: VBsemi Elec
SKU: SI3477DVT1GE3_VBsemi_Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

SI3477DV-T1-GE3 electronic component of VBsemi Elec

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See Product Specifications

Part No.	SI3477DV-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	30V 4.8A 55mO@10V,4.1A 3W P Channel SOT-23-6 MOSFETs ROHS
Datasheet:	SI3477DV-T1-GE3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1648 ea
Line Total: USD 0.82

Availability - 0

MOQ: 5 Multiples: 5
Pack Size: 5

SI3477DV-T1-GE3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 16 May to Wed. 21 May MOQ : 5 Multiples : 5	5 : USD 0.1648 50 : USD 0.1615 150 : USD 0.1591 500 : USD 0.1567

Specifications

Manufacturer VBsemi Elec VBsemi Elec
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package SOT23 - 6 SOT23 - 6
Brand Category Vbsemi Elec Vbsemi Elec
Drain Source Voltage Vdss 30 V 30 V
Continuous Drain Current Id 4.8 A 4.8 A
Drain Source On Resistance Rdson@Vgs Id 55 mOhms @10V , 4.1A 55 mOhms @10V , 4.1A
Power Dissipation Pd 3 W 3 W
Gate Threshold Voltage Vgsth@Id 2 V @250uA 2 V @250uA
Type P Channel P Channel

We are delighted to provide the SI3477DV-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3477DV-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI3477DV-T1-GE3 is a P-channel MOSFET, a type of transistor, manufactured by VBsemi Elec and designed for use in low-voltage applications such as power management, low-side switching, and battery protection. It has a maximum drain-source voltage (VDS) rating of 30V, a drain current rating of 4.8A, and a channel resistance (Ron) of 55mO@10V, 4.1A 3W. The MOSFET comes in an SOT-23-6 package and is compliant with RoHS regulations.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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