SI3477DV-T1-GE3 VBsemi Elec

Name: SI3477DV-T1-GE3
Brand: VBsemi Elec
SKU: SI3477DVT1GE3_VBsemi_Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

SI3477DV-T1-GE3 electronic component of VBsemi Elec

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI3477DV-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3477DV-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.

SI3477DV-T1-GE3

Manufacturer:

VBsemi Elec

Category:

MOSFETs

Description:

30V 4.8A 55mO@10V,4.1A 3W P Channel SOT-23-6 MOSFETs ROHS

Datasheet:

SI3477DV-T1-GE3 Datasheet (PDF)

Shipping Charges:

Click here for details

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Price (USD)

5: USD 0.4367 ea
Line Total: USD 2.18

Availability : 0

Qty	Unit Price
5	$ 0.4367
50	$ 0.3427
150	$ 0.2043
500	$ 0.1705
3000	$ 0.1554
6000	$ 0.1464

SI3477DV-T1-GE3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability0

Ship by Wed. 24 Jun to Tue. 30 Jun

MOQ : 5
Multiples : 5

Qty	Unit Price
5	$ 0.4367
50	$ 0.3427
150	$ 0.2043
500	$ 0.1705
3000	$ 0.1554
6000	$ 0.1464

Specifications

Manufacturer VBsemi ElecVBsemi Elec
Product Category MOSFETsMOSFETs
Rohs yy
Package SOT23 - 6SOT23 - 6
Brand Category Vbsemi ElecVbsemi Elec
Drain Source Voltage Vdss 30 V30 V
Continuous Drain Current Id 4.8 A4.8 A
Drain Source On Resistance Rdson@Vgs Id 55 mOhms @10V , 4.1A55 mOhms @10V , 4.1A
Power Dissipation Pd 3 W3 W
Gate Threshold Voltage Vgsth@Id 2 V @250uA2 V @250uA
Type P ChannelP Channel

We are delighted to provide the SI3477DV-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3477DV-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI3477DV-T1-GE3 is a P-channel MOSFET, a type of transistor, manufactured by VBsemi Elec and designed for use in low-voltage applications such as power management, low-side switching, and battery protection. It has a maximum drain-source voltage (VDS) rating of 30V, a drain current rating of 4.8A, and a channel resistance (Ron) of 55mO@10V, 4.1A 3W. The MOSFET comes in an SOT-23-6 package and is compliant with RoHS regulations.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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