Product Information

VBA1410

VBA1410 electronic component of VBsemi Elec

Datasheet
MOSFET N Trench 40V 12A (Tc) 3V @ 250uA 10 mΩ @ 12.4A,10V SO-8 RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6272 ea
Line Total: USD 0.63

24 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
24 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

VBA1410
VBsemi Elec

1 : USD 0.5284
10 : USD 0.4349
30 : USD 0.3954
100 : USD 0.3467
500 : USD 0.2868
1000 : USD 0.2736

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

IncThe VBA1410 with MOSFET N Trench is a 40V 12A (Tc) 3V @ 250uA 10 mΩ @ 12.4A, 10V SO-8 RoHS manufactured by VBsemi Elec Inc. This component is a metal-oxide-semiconductor field-effect transistor (MOSFET), which is a type of transistor used to amplify or switch electronic signals. This component has a maximum drain-source voltage of 40V and a maximum current rating of 12A. It has low RDS(on) resistance at only 10mΩ @ 12.4A and a very low gate-source threshold voltage of 3V @ 250μA. This component also has a standard SO-8 RoHS package which has a top surface mounting design for easier installation.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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