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VBE1303

VBE1303 electronic component of VBsemi Elec
Images are for reference only
See Product Specifications
Part No.VBE1303
Manufacturer: VBsemi Elec
Category:MOSFET
Description: MOSFET N Trench 30V 100A 2.5V @ 250uA 3 mΩ @ 37A,4.5V TO-252 RoHS
Datasheet: VBE1303 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7711 ea
Line Total: USD 0.77

1152 - Global Stock
Ships to you between
Thu. 06 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1129 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7062
10 : USD 0.5952
30 : USD 0.5378
100 : USD 0.4822
500 : USD 0.3981
1000 : USD 0.381

We proudly offer the VBE1303 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the VBE1303 MOSFET.
     
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The VBE1303, manufactured by VBsemi Elec, is an N Trench MOSFET device rated at 30 V/100 A. It has characteristics such as 2.5 V @ 250 µA gate threshold voltage, 3 mOhm @ 37A drain-source on-resistance, and 4.5 V drain-source Diode Forward Voltage. It comes in a TO-252 RoHS package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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