The VBE1303, manufactured by VBsemi Elec, is an N Trench MOSFET device rated at 30 V/100 A. It has characteristics such as 2.5 V @ 250 µA gate threshold voltage, 3 mOhm @ 37A drain-source on-resistance, and 4.5 V drain-source Diode Forward Voltage. It comes in a TO-252 RoHS package.