X-On Electronics has gained recognition as a prominent supplier of VBE1303 MOSFETs across the USA, India, Europe, Australia, and various other global locations. VBE1303 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

VBE1303 VBsemi Elec

Name: VBE1303
Brand: VBsemi Elec
SKU: VBE1303_VBsemi_Elec
Availability: OutOfStock
Rating: 5 (11 reviews)

VBE1303 electronic component of VBsemi Elec

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See Product Specifications

Part No.	VBE1303
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	MOSFET N Trench 30V 100A 2.5V @ 250uA 3 mÎ© @ 37A,4.5V TO-252 RoHS
Datasheet:	VBE1303 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.0322 ea
Line Total: USD 1.03

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

VBE1303 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Thu. 15 May to Tue. 20 May MOQ : 1 Multiples : 1	1 : USD 1.0322 10 : USD 0.842 30 : USD 0.5602 100 : USD 0.44 500 : USD 0.3465 1000 : USD 0.3282

Specifications

Manufacturer VBsemi Elec VBsemi Elec
Product Category MOSFETs MOSFETs
Brand Vbsemi Elec Vbsemi Elec
Rohs Y Y
Package TO - 252 TO - 252
Fet Type N Channel N Channel
Drain To Source Voltagevdss 30 V 30 V
Continuous Drain Current Id @ 25°C 100 A 100 A
Vgsth Max @ Id 2.5V @ 250uA 2.5V @ 250uA
Rds On Max @ Id Vgs 3mO @ 37A,4.5V 3mO @ 37A,4.5V
Power Dissipation-Max Ta 25°C 235 W 235 W
Drain Source Voltage Vdss 30 V 30 V
Continuous Drain Current Id 100 A 100 A
Drain Source On Resistance Rdson@Vgs Id 3 mOhms @4.5V , 37A 3 mOhms @4.5V , 37A
Power Dissipation Pd 235 W 235 W
Gate Threshold Voltage Vgsth@Id 2.5 V @250uA 2.5 V @250uA
Type N Channel N Channel

We are delighted to provide the VBE1303 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VBE1303 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The VBE1303, manufactured by VBsemi Elec, is an N Trench MOSFET device rated at 30 V/100 A. It has characteristics such as 2.5 V @ 250 µA gate threshold voltage, 3 mOhm @ 37A drain-source on-resistance, and 4.5 V drain-source Diode Forward Voltage. It comes in a TO-252 RoHS package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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