Product Information

VBK5213N

VBK5213N electronic component of VBsemi Elec

Datasheet
MOSFET N & P Trench 20V 3.28A,2.8A 1V @ 100uA 130 mΩ @ 500mA,1.8V;220 mΩ @ 500mA,1.8V SC-70-6 RoHS
Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3035 ea
Line Total: USD 1.52

2037 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
1037 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5

Stock Image

VBK5213N
VBsemi Elec

5 : USD 0.2693
50 : USD 0.2218
150 : USD 0.2015
500 : USD 0.1761
3000 : USD 0.1465
6000 : USD 0.1397

Read More Specifications

     
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
LoadingGif

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Additional Infomation About Product

The VBK5213N is an integrated MOSFET N & P Trench (n- and p-channel) in a SC-70-6 RoHS package which is manufactured by VBsemi Elec. It provides 20V drain-source voltage (VDD), 3.28A maximum drain current, 2.8A maximum gate charge, and 1V gate-source voltage (VGS) at 100uA. Its on-resistance is 130 mO @ 500mA and the threshold voltage is 1.8V @ 500mA with a threshold current of 220 mO.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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