Product Information

10-FZ12NMA080SH01-M260F

10-FZ12NMA080SH01-M260F electronic component of Vincotech

Datasheet
Trans IGBT Module N-CH 1.2KV 66A 20-Pin

Manufacturer: Vincotech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 33.5724 ea
Line Total: USD 100.72

0 - Global Stock
MOQ: 3  Multiples: 3
Pack Size: 3
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3
Multiples : 3
3 : USD 33.5724

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Continuous Collector Current at 25 C
Maximum Operating Temperature
Brand
Operating Temperature Classification
Gate To Emitter Voltage Max
Channel Type
Collector-Emitter Voltage
Rad Hardened
LoadingGif

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10-FZ12NMA080SH01-M260F 10-PZ12NMA080SH01-M260FY datasheet flowMNPC 0 1200 V / 80 A Features flow0 12mm housing mixed voltage component topology neutral point clamped inverter reactive power capability low inductance layout Target Applications Schematic solar inverter UPS Types 10-FZ12NMA080SH01-M260F 10-PZ12NMA080SH01-M260FY Maximum Ratings T =25C, unless otherwise specified j Condition Parameter Symbol Value Unit Half Bridge IGBT V Collector-emitter break down voltage 1200 V CE T =80C 69 h I T =Tjmax DC collector current C A j T =80C 88 c I t limited by T Repetitive peak collector current CRM 240 A p jmax T =80C 158 h P T =Tjmax Power dissipation tot W j T =80C 239 c Gate-emitter peak voltage V 20 V GE t T 150C 10 s SC j Short circuit ratings V CC V =15V 800 V GE V max = 1200V CE Turn off safe operating area (RBSOA) I 160 A cmax T max 150C vj T Maximum Junction Temperature jmax 175 C Neutral Point FWD Peak Repetitive Reverse Voltage V 600 V RRM T =80C 47 h I DC forward current T =Tjmax A F j T =80C 62 c Surge forward current I 600 A FSM t =8,3ms , sin 180 T =25C p c 2 I2t-value 1490 A2s I t I Repetitive peak forward current FRM Square wave, 20 kHz 120 A T =80C 58 h P T =Tjmax Power dissipation tot W j T =80C 88 c Maximum Junction Temperature T 175 C jmax copyright Vincotech 1 13 May. 2015 / Revision 10 10-FZ12NMA080SH01-M260F 10-PZ12NMA080SH01-M260FY datasheet Maximum Ratings T =25C, unless otherwise specified j Condition Parameter Symbol Value Unit Neutral Point IGBT V Collector-emitter break down voltage CE 600 V T =80C h 52 DC collector current I T =Tjmax A C j T =80C 68 c Repetitive peak collector current I t limited by T 225 A CRM p jmax T =80C 72 h P Power dissipation T =Tjmax W tot j T =80C 109 c V Gate-emitter peak voltage 20 V GE t T 150C 6 s SC j Short circuit ratings V V =15V 360 V CC GE V max = 600V CE I Turn off safe operating area (RBSOA) cmax 150 A T max 150C vj Maximum Junction Temperature T 175 C jmax Half Bridge FWD V Peak Repetitive Reverse Voltage 1200 V RRM T =80C 47 h I T =Tjmax DC forward current F A j T =80C 62 c I Surge forward current 335 A FSM t =10ms , sin 180 T =125C p j 2 I2t-value I t 560 A2s Repetitive peak forward current I t limited by T 100 A FRM p jmax T =80C 79 h Power dissipation P T =Tjmax W tot j T =80C 119 c T Maximum Junction Temperature 175 C jmax Thermal Properties Storage temperature T -40+125 C stg T Operation temperature under switching condition -40+(Tjmax - 25) C op Insulation Properties Insulation voltage V is t=2s DC voltage 4000 V Creepage distance min 12,7 mm Clearance 8,95 mm copyright Vincotech 2 13 May. 2015 / Revision 10

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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