VS-10ETS..FPPbF Series, VS-10ETS..FP-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 10 A FEATURES Very low forward voltage drop Base cathode 150 C max. operating junction temperature Designed and qualified according to JEDEC-JESD47 Fully isolated package (V = 2500 V ) INS RMS 1 3 UL E78996 approved Available TO-220 FULL-PAK Cathode Anode Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY APPLICATIONS Package TO-220FP Input rectification I 10 A F(AV) Vishay Semiconductors switches and output rectifiers V 800 V to 1200 V R which are available in identical package outlines V at I 1.1 V F F DESCRIPTION I 160 A FSM High voltage rectifiers optimized for very low forward T max. 150 C J voltage drop with moderate leakage. Diode variation Single die These devices are intended for use in main rectification (single or three phase bridge). OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS Capacitive input filter T = 55 C, T = 125 C A J 12.0 16.0 A common heatsink of 1 C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Sinusoidal waveform 10 A F(AV) V Range 800/1200 V RRM I 160 A FSM V 10 A, T = 25 C 1.1 V F J T - 40 to 150 C J VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM NON-REPETITIVE I RRM RSM RRM PART NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT 150 C V V mA VS-10ETS08FPPbF, VS-10ETS08FP-M3 800 900 0.5 VS-10ETS12FPPbF, VS-10ETS12FP-M3 1200 1300 Revision: 18-Jun-13 Document Number: 94335 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10ETS..FPPbF Series, VS-10ETS..FP-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I T = 105 C, 180 conduction half sine wave 10 F(AV) C 10 ms sine pulse, rated V applied 135 A Maximum peak one cycle RRM I FSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 160 10 ms sine pulse, rated V applied 91 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 130 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 1300 A s ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum forward voltage drop V 10 A, T = 25 C 1.1 V FM J Forward slope resistance r 20 m t T = 150 C J Threshold voltage V 0.82 V F(TO) T = 25 C 0.05 J Maximum reverse leakage current I V = Rated V mA RM R RRM T = 150 C 0.50 J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS VALUES UNITS Maximum junction and storage T , T - 40 to 150 C J Stg temperature range Maximum thermal resistance, R DC operation 2.5 thJC junction to case Maximum thermal resistance, R 62 C/W thJA junction to ambient Typical thermal resistance, R Mounting surface, smooth and greased 0.5 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 10ETS08FP Marking device Case style TO-220 FULL-PAK (94/V0) 10ETS12FP Revision: 18-Jun-13 Document Number: 94335 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000