Product Information

4N33-X007T

4N33-X007T electronic component of Vishay

Datasheet
Transistor Output Optocouplers Photodarlington CTR>500%

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

4N33-X007T
Vishay

1 : USD 0.7415
10 : USD 0.4789
100 : USD 0.3638
500 : USD 0.2751
1000 : USD 0.2481
2500 : USD 0.2473
5000 : USD 0.2473
10000 : USD 0.2473
25000 : USD 0.2473
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Brand
Cnhts
Hts Code
Mxhts
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4N32, 4N33 www.vishay.com Vishay Semiconductors Optocoupler, Photodarlington Output, High Gain, With Base Connection FEATURES 6 A 1 B Very high current transfer ratio, 500 % min. 11 High isolation resistance, 10 typical C 2 5 C Standard plastic DIP package NC 3 4 E Material categorization: i179005 1 for definitions of compliance please see V DE www.vishay.com/doc 99912 i179005 AGENCY APPROVALS UL1577, file no. E52744 system code H DESCRIPTION DIN EN 60747-5-2 (VDE 0884) / DIN EN 60747-5-5 (pending), available with option 1 The 4N32 and 4N33 are optically coupled isolators with a gallium arsenide infrared LED and a solicon photodarlington BSI IEC 60950 IEC 60065 sensor. FIMKO Switching can be achieved while maintaining a high degree of isolation between driving and load circuits. These optocouplers can be used to replace reed and mercury relays with advantages of long life, high speed switching and elimination of magnetic fields. ORDERING INFORMATION DIP 4 N 3 - X 0 T PART NUMBER PACKAGE OPTION TAPE AND REEL 7.62 mm AGENCY CERTIFIED/PACKAGE CTR (%) UL, BSI, FIMKO 500 500 DIP-6 4N32 4N33 Note Additional options may be possible, please contact sales office Rev. 1.3, 30-Nov-17 Document Number: 81865 1 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 4N32, 4N33 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT input Reverse voltage V 3V R Forward current I 60 mA F Power dissipation P 100 mW diss Derate linearly From 55 C 1.33 mW/C output Collector emitter breakdown voltage BV 30 V CEO Emitter base breakdown voltage BV 8V EBO Collector base breakdown voltage BV 50 V CBO Emitter collector breakdown voltage BV 5V ECO Collector (load) current I 100 mA C Power dissipation P 150 mW diss Derate linearly 2mW/C coupler Total dissipation P 250 mW tot Derate linearly 3.3 mW/C Isolation test voltage (between emitter 1 s V 5300 V ISO RMS Leakage path 7mm min. Air path 7mm min. 12 V = 500 V, T = 25 C R 10 IO amb IO Isolation resistance 11 V = 500 V, T = 100 C R 10 IO amb IO Storage temperature T -55 to +150 C stg Operating temperature T -55 to +100 C amb (1) Lead soldering time At 260 C 10 s Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP) ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT input Forward voltage I = 50 mA V - 1.25 1.5 V F F Reverse current V = 3 V I - 0.1 100 A R R Capacitance V = 0 V C -25 pF R O output (1) Collector emitter breakdown voltage I = 100 A, I = 0 BV 30 - - V C F CEO (1) Collector base breakdown voltage I = 100 A, I = 0 BV 50 - - V C F CBO (1) Emitter base breakdown voltage I = 100 A, I = 0 BV 8- - V C F EBO (1) Emitter collector breakdown voltage I = 100 A, I = 0 BV 510 - V C F ECO Collector emitter leakage current V = 10 V, I = 0 I - 1 100 nA CE F CEO I = 0.5 mA, V = 5 V h 13 - - C CE FE coupler Collector emitter saturation voltage V -1 - V CEsat Coupling capacitance - 1.5 - pF Notes Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements (1) Indicates JEDEC registered values Rev. 1.3, 30-Nov-17 Document Number: 81865 2 For technical questions, contact: optocoupleranswers vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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