BA479G, BA479S www.vishay.com Vishay Semiconductors RF PIN Diodes - Single in DO-35 (DO-204AH) FEATURES Wide frequency range 10 MHz to 1 GHz AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS Current controlled HF resistance in adjustable attenuators DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE TYPE CIRCUIT PART ORDERING CODE TYPE MARKING REMARKS DIFFERENTIATION CONFIGURATION BA479G V = 30 V, z > 5 k BA479G-TR or BA479G-TAP BA479G Single Tape and reel/ammopack R r BA479S V = 30 V, z > 9 k BA479S-TR or BA479S-TAP BA479S Single Tape and reel/ammopack R r ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PART TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 30 V R Forward continuous current I 50 mA F THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T = constant R 350 K/W L thJA Junction temperature T 125 C j Storage temperature range T -55 to +150 C stg ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 20 mA V 1V F F Reverse current V = 30 V I 0.05 A R R Diode capacitance f = 100 MHz, V = 0 V C 0.5 pF R D Differential forward resistance f = 100 MHz, I = 1.5 mA r 50 F f BA479G z5k r Reverse impedance f = 100 MHz, V = 0 V R BA479S z9k r Minority carrier lifetime I = 10 mA, I = 10 mA 4s F R Rev. 1.9, 27-Apr-17 Document Number: 85527 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BA479G, BA479S www.vishay.com Vishay Semiconductors TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 20 - Circuitwith 10 dB Attenuation 0 V =40dBmV 0 10 f = 100 MHzunmodulated 1 T = 25 C - 20 amb 1 - 40 Scattering Limit 0.1 - 60 0.01 - 80 2.0 0 0.4 0.8 1.2 1.6 0 20 40 60 80 95 9735 V - Forward Voltage (V) F 95 9733 f , modulated with 200 kHz, m = 100 % (MHz) 2 Fig. 1 - Forward Current vs. Forward Voltage Fig. 3 - Typ. Cross Modulation Distortion vs. Frequency f 2 10 000 1000 100 f > 20 MHz T = 25 C j 10 1 10 0.001 0.01 0.1 1 95 9734 I - Forward Current (mA) F Fig. 2 - Differential Forward Resistance vs. Forward Current PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identicfi ation 26 min. 1.024 3.9 max. 0.154 26 min. 1.024 3.1 min. 0.120 Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.9, 27-Apr-17 Document Number: 85527 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 r - Differential Forward Resistance () I - Forward Current (mA) f F 0.6 max. 0.024 0.4 min. 0.015 a - Typical Cross Modulation Distortion (dB) 1.7 0.067 1.3 0.050