BPW77NA, BPW77NB Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES Package type: leaded Package form: TO-18 Dimensions (in mm): 4.7 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation Fast response times 94 8401 Angle of half sensitivity: = 10 Base terminal connected Hermetically sealed package DESCRIPTION Lead (Pb)-free component in accordance with BPW77 is a silicon NPN phototransistor with high radiant RoHS 2002/95/EC and WEEE 2002/96/EC sensitivity in hermetically sealed TO-18 package with base terminal and glass lens. It is sensitive to visible and near APPLICATIONS infrared radiation. Detector in electronic control and drive circuits PRODUCT SUMMARY COMPONENT I (mA) (deg) (nm) ca 0.1 BPW77NA 7.5 to 15 10 450 to 1080 BPW77NB > 10 10 450 to 1080 Note Test condition see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM BPW77NA Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 BPW77NB Bulk MOQ: 1000 pcs, 1000 pcs/bulk TO-18 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector base voltage V 80 V CBO Collector emitter voltage V 70 V CEO Emitter base voltage V 5V EBO Collector current I 50 mA C Collector peak current t /T = 0.5, t 10 ms I 100 mA p p CM Total power dissipation T 25 C P 250 mW amb V Junction temperature T 125 C j Operating temperature range T - 40 to + 125 C amb Storage temperature range T - 40 to + 125 C stg Soldering temperature t 5 s T 260 C sd 2 Thermal resistance junction/ambient Connected with Cu wire, 0.14 mm R 400 K/W thJA Thermal resistance junction/gase R 150 K/W thJC Note T = 25 C, unless otherwise specified amb www.vishay.com For technical questions, contact: detectortechsupport vishay.com Document Number: 81527 402 Rev. 1.5, 08-Sep-08BPW77NA, BPW77NB Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors 800 600 R thJC 400 200 R thJA 0 150 0 25 50 75 100 125 T - Ambient Temperature (C) 94 8342 amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Collector emitter breakdown voltage I = 1 mA V 70 V C (BR)CEO Collector emitter dark current V = 20 V, E = 0 I 1 100 nA CE CEO Collector emitter capacitance V = 5 V, f = 1 MHz, E = 0 C 6pF CE CEO Angle of half sensitivity 10 deg Wavelength of peak sensitivity 850 nm p Range of spectral bandwidth 450 to 1080 nm 0.1 2 E = 1 mW/cm , = 950 nm, e Collector emitter saturation voltage V 0.15 0.3 V CEsat I = 1 mA C Turn-on time V = 5 V, I = 5 mA, R = 100 t 6s S C L on Turn-off time V = 5 V, I = 5 mA, R = 100 t 5s S C L off Cut-off frequency V = 5 V, I = 5 mA, R = 100 f 110 kHz S C L c Note T = 25 C, unless otherwise specified amb TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT 2 BPW77NA I 7.5 15 mA E = 1 mW/cm , = 950 nm, ca e Collector light current V = 5 V CE BPW77NB I 10 mA ca BASIC CHARACTERISTICS T = 25 C, unless otherwise specified amb 6 2.50 10 2.25 V = 5V CE 2 5 E = 1 mW/cm 10 2.00 e = 950 nm 1.75 4 10 1.50 1.25 3 10 1.00 2 0.75 10 V = 20 V CE 0.50 E=0 1 10 0.25 0 0 10 150 20 50 100 0 1020 3040 5060 70 80 90 100 94 8344 T - Ambient Temperature (C) T - Ambient Temperature (C) 94 8343 amb amb Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature Document Number: 81527 For technical questions, contact: detectortechsupport vishay.com www.vishay.com Rev. 1.5, 08-Sep-08 403 I - Collector Dark Current (nA) P - Total Power Dissipation (mW) CEO tot I - Relative Collector Current ca rel