333 3 BYG24D, BYG24G, BYG24J www.vishay.com Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES Available Low profile package Ideal for automated placement Glass passivated junction Low reverse current Soft recovery characteristics Fast reverse recovery time Meets MSL level 1, per J-STD-020, LF maximum peak of SMA (DO-214AC) 260 C AEC-Q101 qualified available Cathode Anode - Automotive ordering code P/NHE3 or P/NHM3 Material categorization: for definitions of compliance ADDITIONAL RESOURCES please see www.vishay.com/doc 99912 3D Models TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for PRIMARY CHARACTERISTICS consumer, computer, automotive, and telecommunication. I 1.5 A F(AV) V 200 V, 400 V, 600 V MECHANICAL DATA RRM I 30 A FSM Case: SMA (DO-214AC) I 1.0 A Molding compound meets UL 94 V-0 flammability rating R Base P/N-E3 - RoHS-compliant, commercial grade V 1.25 V F Base P/N-M3 - halogen-free, RoHS-compliant, and t 140 ns rr commercial grade E 20 mJ R Base P/NHE3 X - RoHS-compliant, and AEC-Q101 qualified T max. 150 C J Base P/NHM3 X - halogen-free, RoHS-compliant and Package SMA (DO-214AC) AEC-Q101 qualified Circuit configuration Single ( X denotes revision code e.g. A, B,...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYG24D BYG24G BYG24J UNIT Device marking code BYG24D BYG24G BYG24J Maximum repetitive peak reverse voltage V 200 400 600 V RRM Average forward current at T = 65 C I 1.5 A A F(AV) Peak forward surge current 10 ms single half I 30 A FSM sine-wave superimposed on rated load Pulse energy in avalanche mode, non repetitive E 20 mJ R (inductive load switch off) I = 1 A, T = 25 C (BR)R J Operating junction and storage temperature range T , T -55 to +150 C J STG Revision: 21-Feb-2020 Document Number: 88960 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D BYG24D, BYG24G, BYG24J www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL BYG24D BYG24G BYG24J UNIT Minimum breakdown voltage I = 100 A V 200 400 600 V R BR I = 1 A 1.15 F Maximum instantaneous (1) T = 25 C V V J F forward voltage I = 1.5 A 1.25 F T = 25 C 1 J Maximum reverse current V = V I A R RRM R T = 100 C 10 J I = 0.5 A, I = 1.0 A, F R Maximum reverse recovery time t 140 ns rr I = 0.25 A rr Note (1) Pulse test: 300 s pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL BYG24D BYG24G BYG24J UNIT Junction to case R 25 C/W JC (1) R 150 JA Maximum thermal resistance, junction to ambient C/W (2) R 125 JA Notes (1) 2 Mounted on epoxy-glass hard tissue 35 m x 17 mm cooper area per electrode (2) 2 Mounted on epoxy-glass hard tissue 35 m x 50 mm cooper area per electrode ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE BYG24D-E3/TR 0.064 TR 1800 7 diameter plastic tape and reel BYG24D-E3/TR3 0.064 TR3 7500 13 diameter plastic tape and reel (1) BYG24DHE3 A/H 0.064 H 1800 7 diameter plastic tape and reel (1) BYG24DHE3 A/I 0.064 I 7500 13 diameter plastic tape and reel BYG24D-M3/TR 0.064 TR 1800 7 diameter plastic tape and reel BYG24D-M3/TR3 0.064 TR3 7500 13 diameter plastic tape and reel (1) BYG24DHM3 A/H 0.064 H 1800 7 diameter plastic tape and reel (1) BYG24DHM3 A/I 0.064 I 7500 13 diameter plastic tape and reel Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 60 100 R = JA V = V R RRM 50 V = V R RRM 155 K/W P - Limit R 40 at 100 % V R 175 K/W 30 10 20 10 P - Limit R at 80 % V R 0 1 25 50 75 100 125 150 25 50 75 100 125 150 Junction Temperature (C) Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Reverse Current vs. Junction Temperature Revision: 21-Feb-2020 Document Number: 88960 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Junction Temperature (C) 125 K/W Reverse Power Dissipation (mW) Reverse Current (A)