DG2711 Vishay Siliconix Low-Voltage, Sub-Ohm, SPDT Analog Switch DESCRIPTION FEATURES The DG2711 is a sub-ohm single-pole/double-throw Low voltage operation (1.6 V to 3.6 V) monolithic CMOS analog switch designed for high Low on-resistance - R : 0.44 typ. DS(on) performance switching of analog signals. Combining low Fast switching - t : 25 ns, t : 14 ns ON OFF power, high speed (t : 25 ns, t : 14 ns), low ON OFF Low leakage : 0.44 ) and small physical size on-resistance (R DS(on) TTL/CMOS compatible (SC70), the DG2711 is ideal for portable and battery 6-pin SC-70 package powered applications requiring high performance and Compliant to RoHS directive 2002/95/EC efficient use of board space. The DG2711 is built on Vishay Siliconixs low voltage BENEFITS submicron CMOS process. An epitaxial layer prevents Reduced power consumption latchup. Break-before-make is guaranteed for DG2711. Simple logic interface Each switch conducts equally well in both directions when High accuracy on, and blocks up to the power supply level when off. Reduce board space As a committed partner to the community and the environment, Vishay Siliconix manufactures this product APPLICATIONS with the lead (Pb)-free device terminations. For analog Cellular phones switching products manufactured with 100 % matte tin device terminations, the lead (Pb)-free-E3 suffix is being Communication systems used as a designator. Portable test equipment Battery operated systems Sample and hold circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE SC-70 Logic NC NO IN NO (Source ) 1 6 1 0 ON OFF V+ COM 2 5 1OFF ON GND NC (Source ) 3 4 2 Top View Device Marking: E9xx ORDERING INFORMATION Temp. Range Package Part Number - 40 to 85 C SC70-6 DG2711DL-T1-E3 Document Number: 73200 www.vishay.com S10-2403-Rev. C, 25-Oct-10 1DG2711 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Reference V+ to GND - 0.3 to + 4 V a - 0.3 to (V+ + 0.3) IN, COM, NC, NO Continuous Current (NO, NC and COM Pins) 200 mA Peak Current (Pulsed at 1 ms, 10 % duty cycle) 300 Storage Temperature (D Suffix) - 65 to 150 C b c 250 mW Power Dissipation (Packages) 6-Pin SO70 Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 3.1 mW/C above 70 C. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (V+ = 1.8 V) Test Conditions Limits Otherwise Unless Specified - 40 C to 85 C e a b c b V+ = 1.8 V, 10 %, V = 0.4 V or 1.0 V Parameter Symbol Temp. Min. Typ. Max. Unit IN Analog Switch V , V , NO NC d Full 0 V+ V Analog Signal Range V COM V+ = 1.8 V, V = 0.9 V COM Room 0.8 2.0 R On-Resistance ON I , I = 100 mA Full 2.5 NO NC I Room NO(off) - 1 1 d I - 10 10 V+ = 2.2 V, Full NC(off) f Switch Off Leakage Current V , V = 0.2 V/2 V, V = 2 V/0.2 V NO NC COM Room - 1 1 I nA COM(off) d - 10 10 Full Room - 1 1 f I V+ = 2.2 V, V , V = V = 0.2 V/2 V Channel-On Leakage Current COM(on) NO NC COM d - 10 10 Full Digital Control V Input High Voltage Full 1.0 INH V V Input Low Voltage Full 0.4 INL d C Full 5 pF Input Capacitance in f I or I V = 0 or V+ Full - 1 1 A Input Current INL INH IN Dynamic Characteristics Room 36 60 d t Turn-On Time ON d 62 Full V or V = 1.5 V, R = 300 , C = 35 pF NO NC L L Room 22 42 ns d t Figures1 and 2 Turn-Off Time OFF Full 44 d t Room 3 Break-Before-Make Time d d Q C = 1 nF, V = 0 V, R = 0 figure 3 Room 20 pC Charge Injection INJ L GEN GEN d OIRR Room - 56 Off-Isolation R = 50, C = 5 pF, f = 1 MHz dB L L d X Room - 56 Crosstalk TALK C NO(off) d Room 73 NO, NC Off Capacitance C V = 0 or V+, f = 1 MHz NC(off) pF IN d C Room 167 Channel-On Capacitance ON www.vishay.com Document Number: 73200 2 S10-2403-Rev. C, 25-Oct-10