DG308B, DG309B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES 22 V supply voltage rating The DG308B, DG309B analog switches are highly improved CMOS compatible logic versions of the industry-standard DG308A, DG309. These Low on-resistance - R : 45 DS(on) devices are fabricated in Vishay Siliconix proprietary silicon Low leakage - I : 20 pA D(on) gate CMOS process, resulting in lower on-resistance, lower Single supply operation possible leakage, higher speed, and lower power consumption. Extended temperature range These quad single-pole single-throw switches are designed Fast switching - t : < 200 ns ON for a wide variety of applications in telecommunications, Low glitching - Q: 1 pC instrumentation, process control, computer peripherals, etc. BENEFITS An improved charge injection compensation design minimizes switching transients. The DG308B and DG309B Wide analog signal range can handle up to 22 V input signals. An epitaxial layer Simple logic interface prevents latchup. Higher accuracy All devices feature true bi-directional performance in the on Minimum transients condition, and will block signals to the supply levels in the off Reduced power consumption condition. Superior to DG308A, DG309 Space savings (TSSOP) The DG308B is a normally open switch and the DG309B is a normally closed switch. (see Truth Table.) APPLICATIONS Industrial instrumentation Test equipment Communications systems Disk drives Computer peripherals Portable instruments Sample-and-hold circuits FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG308B Dual-In-Line, SOIC and TSSOP IN IN 1 2 1 16 D D 1 2 TRUTH TABLE 2 15 Logic DG308B DG309B S S 1 2 3 14 0 OFF ON V- V+ 1ON OFF 4 13 Logic 0 3.5 V GND NC 5 12 Logic 1 11 V S S 4 3 6 11 D D 4 3 7 10 IN IN 4 3 8 9 Top View * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70047 www.vishay.com S11-0303-Rev. G, 28-Feb-11 1DG308B, DG309B Vishay Siliconix ORDERING INFORMATION Temp. Range Package Part Number DG308BDJ DG308BDJ-E3 16-Pin PlasticDIP DG309BDJ DG309BDJ-E3 DG308BDY DG308BDY-E3 DG308BDY-T1 DG308BDY-T1-E3 16-Pin Narrow SOIC DG309BDY DG309BDY-E3 - 40 C to 85 C DG309BDY-T1 DG309BDY-T1-E3 DG308BDQ DG308BDQ-E3 DG308BDQ-T1 DG308BDQ-T1-E3 16-Pin TSSOP DG309BDQ DG309BDQ-E3 DG309BDQ-T1 DG309BDQ-T1-E3 ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Voltages Referenced, V+ to V- 44 GND 25 V (V-) - 2 to (V+) + 2 a Digital Inputs , V , V or S D 30 mA, whichever occurs first Current, Any Terminal 30 mA Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100 (AK Suffix) - 65 to 150 Storage Temperature C (DJ, DY and DQ Suffix) - 65 to 125 c 16-Pin Plastic DIP 470 b d Power Dissipation (Package) 16-Pin Narrow SOIC and TSSOP 640 mW e 16-Pin CerDIP 900 Notes: a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. X X X b. All leads welded or soldered to PC board. c. Derate 6.5 mW/C above 75 C. d. Derate 7.6 mW/C above 75 C. e. Derate 12 mW/C above 75 C. www.vishay.com Document Number: 70047 2 S11-0303-Rev. G, 28-Feb-11