DG3157A, DG3157B Vishay Siliconix Low Voltage, 300-MHz - 3 dB Bandwidth, SPDT Analog Switch with Power Down Protection (2:1 Multiplexer/Demultiplexer Bus Switch) DESCRIPTION FEATURES The DG3157A, DG3157B are high-speed single-pole Ultra small miniQFN6 package of double-throw, low voltage switch. Using sub-micro CMOS Pb-free 1 mm x 1.2 mm Available technology, the DG3157A, DG3157B achieves low on- Wide operation voltage range: 1.8 V to 5.5 V resistance and negligible propagation delay. The DG3157A, RoHS* Useful in both analog and digital signal COMPLIANT DG3157B can handle both analog and digital signals and switching permits signals with amplitudes of up to V to be CC transmitted in either direction. Select pin of control logic input 300 MHz - 3 dB bandwidth can be over the V+. When the select pin is low, B is 0 Power down safe design connected to the output A pin. When the select pin is high, Low voltage logic threshold: B is connected to the output A pin. The path that is open will 1 V (high) = 1.2 V at V+ = 3.3 V th have a high-impedance state with respect to the output A pin. Minimal propagation delay Break before make is guaranteed. The DG3157A has an internal pull down resistor on the control pin S, while the Break-before-make switching DG3157B does not. Zero bounce in flow-through mode > 300 mA latch up current per JESD78 > 8 kV ESD/HBM DG3157A version has internal pull down resistor on control pin S FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION miniQFN-6 DG3157A TRUTH TABLE Logic Input (S) Function 1 6 S B 1 0 B Connected to A 0 B Connected to A GND 2 5 V+ 1 1 B 3 4 A 0 ORDERING INFORMATION Temp. Range Package Part Number Top View DG3157ADN-T1-E4 Device Marking: E - 40 C to 85 C miniQFN-6 DG3157BDN-T1-E4 miniQFN-6 DG3157B 1 6 S B 1 GND 2 5 V+ B 3 4 0 A Top View Device Marking: D * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 68628 www.vishay.com S-81944-Rev. C, 25-Aug-08 1DG3157A, DG3157B Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Parameter Limit Unit Reference V+ to GND - 0.3 to + 6 V a - 0.3 to (V+ + 0.3) S, A, B Continuous Current (Any terminal) 50 mA Peak Current (Pulsed at 1 ms, 10 % duty cycle) 200 Storage Temperature D-Suffix - 65 to 150 C b c 160 mW Power Dissipation (Packages) miniQFN-6 Notes: a. Signals on A, or B or S exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 2.0 mW/C above 70 C. SPECIFICATIONS Test Conditions Limits Unless Otherwise Specified - 40 C to 85 C e a b c b V+ = 3.0 V, V = 0.5 V, V = 2.0 V Parameter Symbol SL SH Temp. Min. Typ. Max. Unit DC Characteristics V+ = 1.65 to 1.95 V 1.2 V+ = 2.0 to 2.6 V 1.4 High Level Input Voltage V SH V+ = 2.7 to 3.6 V 2.0 V+ = 4.5 to 5.5 V 2.4 Full V V+ = 1.65 to 1.95 V 0.3 V+ = 2.0 to 2.6 V 0.4 Low Level Input Voltage V SL V+ = 2.7 to 3.6 V 0.5 V+ = 4.5 to 5.5 V 0.8 V = 0 V, I = 30 mA 4.8 7 BN A V = 2.4 V, I = - 30 mA V+ = 4.5 V 5.7 12 BN A V = 4.5 V, I = - 30 mA 10.3 15 BN A V = 0 V, I = 24 mA 5.9 9 BN A V+ = 3.0 V R V = 3.0 V, I = - 24 mA On-Resistance Full 13.7 20 ON BN A V = 0 V, I = 8 mA 712 BN A V+ = 2.3 V V = 2.3 V, I = - 8 mA 16.2 30 BN A V = 0 V, I = 4 mA 9.2 20 BN A V+ = 1.65 V V = 1.65 V, I = - 4 mA 24 50 BN A V+ = 4.5 V, I = - 30 mA 8 A V+ = 3.0 V, I = - 24 mA 13 A R 0 < V < V+ On-Resistance Flatness FLAT BN V+ = 2.3 V, I = - 8 mA 24 A V+ = 1.65 V, I = - 4 mA 89 A Room V+ = 4.5 V, V = 3.15 V, I = - 30 mA 0.8 BN A V+ = 3.0 V, V = 2.1 V, I = - 24 mA 0.1 On-Resistance Matching BN A R ON Between Channels V+ = 2.3 V, V = 1.6 V, I = - 8 mA 0.2 BN A V+ = 1.65 V, V = 1.15 V, I = - 4 mA 0.9 BN A V+ = 5.5 V, DG3157B - 1.0 1.0 V = 5.5 V, Input Leakage Current I Full A S DG3157A - 1.0 2.5 7.0 V = 0.8 V, 2.4 V S A Room - 0.1 0.1 I V+ = 5.5 V, V /V = 0 V/5.5 V Off Stage Switch Leakage BN(off) A B Full - 1.0 1.0 Room - 0.1 0.1 I V+ = 5.5 V, V /V = 0 V/5.5 V On State Switch Leakage BN(on) A B Full - 1.0 1.0 www.vishay.com Document Number: 68628 2 S-81944-Rev. C, 25-Aug-08