Product Information

EGP51D-E3/C

EGP51D-E3/C electronic component of Vishay

Datasheet
Rectifiers 5A,200V,50NS

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8674 ea
Line Total: USD 0.87

2716 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2716 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

EGP51D-E3/C
Vishay

1 : USD 1.6635
10 : USD 1.4141
100 : USD 1.181
500 : USD 1.0516
1400 : USD 0.8888
2800 : USD 0.8294
4200 : USD 0.7834
9800 : USD 0.7662

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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EGP51A, EGP51B, EGP51C, EGP51D, EGP51F, EGP51G www.vishay.com Vishay General Semiconductor Glass Passivated Ultrafast Plastic Rectifier FEATURES Superectifier structure for high reliability condition Cavity-free glass-passivated junction Ultrafast reverse recovery time Low forward voltage drop Low leakage current Low switching losses, high efficiency High forward surge capability DO-201AD Solder dip 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS PRIMARY CHARACTERISTICS For use in high frequency rectification and freewheeling I 5.0 A F(AV) application in switching mode converters and inverters for V 50 V, 100 V, 150 V, 200 V, 300 V, 400 V RRM consumer, computer, and telecommunication. I 150 A FSM MECHANICAL DATA t 50 ns rr Case: DO-201AD V 0.96 V, 1.25 V F Molding compound meets UL 94 V-0 flammability rating T max. 175 C J Base P/N-E3 - RoHS-compliant, commercial grade Package DO-201AD Terminals: Matte tin plated leads, solderable per Diode variations Single die J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL EGP51A EGP51B EGP51C EGP51D EGP51F EGP51G UNIT Maximum repetitive peak reverse voltage V 50 100 150 200 300 400 V RRM Maximum RMS voltage V 35 70 105 140 210 280 V RMS Maximum DC blocking voltage V 50 100 150 200 300 400 V DC Maximum average forward rectified current I 5A F(AV) 0.375 (9.5 mm) lead length at T = 138.8 C L Peak forward surge current 8.3 ms single half I 150 A FSM sine-wave superimposed on rated load , T -65 to +175 C Operating and storage temperature range T J STG Revision: 22-Dec-16 Document Number: 87530 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 EGP51A, EGP51B, EGP51C, EGP51D, EGP51F, EGP51G www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL EGP51A EGP51B EGP51C EGP51D EGP51F EGP51G UNIT Maximum instantaneous (1) 5.0 A V 0.96 1.25 V F forward voltage T = 25 C 5.0 A Maximum DC reverse current (2) I A R at rated DC blocking voltage T = 125 C 50 A Maximum reverse I = 0.5 A, I = 1.0 A, F R t 50 ns rr recovery time I = 0.25 A rr Typical junction capacitance 4.0 V, 1 MHz C 117 48 pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: pulse width, 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL EGP51A EGP51B EGP51C EGP51D EGP51F EGP51G UNIT (1)(2) R 55 JA Typical thermal resistance C/W (2)(3) R 8.5 JL Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/ R D J JA (2) Thermal resistance R - junction to ambient, R - junction to lead at 0.375 (9.5 mm) lead length (use DC test method) JA JL (3) Device mounted on 30 mm x 30 mm PCB pad size areas. ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE EGP51G-E3/C 1.21 C 1400 13 diameter paper tape and reel EGP51G-E3/D 1.21 D 1000 Ammo pack packaging RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 6.0 6.0 EGP51A thru EGP51D D = 0.8 5.0 5.0 D = 0.5 D = 0.3 4.0 4.0 D = 0.2 D = 1.0 D = 0.1 3.0 3.0 Copper Heatsinks 2.0 2.0 T 1.0 1.0 0.375 (9.5 mm) D = t /T t p p Lead Length 0 0 0 255075 100 125 150 175 0123456 Average Forward Current (A) Lead Temperature (C) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 22-Dec-16 Document Number: 87530 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)

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