IRF620S, SiHF620S www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Surface-mount 2 Available in tape and reel D PAK (TO-263) Dynamic dv/dt rating Available Repetitive avalanche rated G Fast switching Available Simple drive requirements Ease of paralleling D G Material categorization: for definitions of compliance S S please see www.vishay.com/doc 99912 Note N-Channel MOSFET * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. PRODUCT SUMMARY Please see the information / tables in this datasheet for details V (V) 200 DS DESCRIPTION R ( )V = 10 V 0.80 DS(on) GS Third generation power MOSFETs from Vishay provide the Q max. (nC) 14 designer with the best combination of fast switching, g ruggedized device design, low on-resistance and Q (nC) 3.0 gs cost-effectiveness. Q (nC) 7.9 gd 2 The D PAK (TO-263) is a surface-mount power package Configuration Single capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The 2 D PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface-mount application. ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and halogen-free SiHF620S-GE3 SiHF620STRL-GE3 SiHF620STRR-GE3 a a Lead (Pb)-free IRF620SPbF IRF620STRLPbF IRF620STRRPbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 200 DS V Gate-source voltage V 20 GS T = 25 C 5.2 C Continuous drain current V at 10 V I GS D T = 100 C 3.3 A C a Pulsed drain current I 18 DM Linear derating factor 0.40 W/C e Linear derating factor (PCB mount) 0.025 b Single pulse avalanche energy E 110 mJ AS a Avalanche current I 5.2 A AR a Repetitive avalanche energy E 5.0 mJ AR Maximum power dissipation T = 25 C 50 C P W D e Maximum power dissipation (PCB mount) T = 25 C 3.0 A c Peak diode recovery dv/dt dv/dt 5.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 6.1 mH, R = 25 , I = 5.2 A (see fig. 12) DD J g AS c. I 5.2 A, di/dt 95 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S20-0683-Rev. E, 07-Sep-2020 Document Number: 91028 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRF620S, SiHF620S www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Maximum junction-to-ambient R -40 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -2.5 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 200 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.29 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 3.1 A - - 0.80 DS(on) GS D b Forward transconductance g V = 50 V, I = 3.1 A 1.5 - - S fs DS D Dynamic Input capacitance C - 260 - iss V = 0 V, GS Output capacitance C -V = 25 V, 100- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -30- rss Total gate charge Q -- 14 g I = 4.8 A, V = 160 V, D DS Gate-source charge Q --V = 10 V 3.0 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --7.9 gd Turn-on delay time t -7.2 - d(on) Rise time t -22 - r V = 100 V, I = 4.8 A, DD D ns b R = 18 , R = 20 , see fig. 10 Turn-off delay time t -1g D 9- d(off) Fall time t -13- f Gate input resistance R f = 1 MHz, open drain 0.8 - 3.5 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of die G Internal source inductance L -7.5 - contact S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 5.2 S showing the A G integral reverse a Pulsed diode forward current I -- 18 S SM p - n junction diode b Body diode voltage V T = 25 C, I = 5.2 A, V = 0 V -- 1.8 V SD J S GS Body diode reverse recovery time t - 150 300 ns rr b T = 25 C, I = 4.8 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q -0.91 1.8 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S20-0683-Rev. E, 07-Sep-2020 Document Number: 91028 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000