IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 400 DS Available Repetitive Avalanche Rated R ()V = 10 V 1.0 DS(on) GS RoHS* Fast Switching Q (Max.) (nC) 38 COMPLIANT g Ease of Paralleling Q (nC) 5.7 gs Q (nC) 22 Simple Drive Requirements gd Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance S G and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF730PbF Lead (Pb)-free SiHF730-E3 IRF730 SnPb SiHF730 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 400 DS V Gate-Source Voltage V 20 GS T = 25 C 5.5 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.5 A C a Pulsed Drain Current I 22 DM Linear Derating Factor 0.59 W/C b Single Pulse Avalanche Energy E 290 mJ AS a Repetitive Avalanche Current I 5.5 A AR a Repetitive Avalanche Energy E 7.4 mJ AR Maximum Power Dissipation T = 25 C P 74 W C D c Peak Diode Recovery dV/dt dV/dt 4.0 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 16 mH, R = 25 , I = 5.5 A (see fig. 12). DD J g AS c. I 5.5 A, dI/dt 90 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91047 www.vishay.com S11-0508-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRF730, SiHF730 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.7 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 400 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.54 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 3.3 A -- 1.0 DS(on) GS D b Forward Transconductance g V = 50 V, I = 3.3 A 2.9 - - S fs DS D Dynamic Input Capacitance C - 700 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 170- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -64- rss Total Gate Charge Q -- 38 g I = 3.5 A, V = 320 V, D DS Gate-Source Charge Q --V = 10 V 5.7 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --22 gd Turn-On Delay Time t -10 - d(on) Rise Time t -15 - r V = 200 V, I = 3.5 A DD D ns b R = 12 , R = 57 , see fig. 10 g D Turn-Off Delay Time t -38- d(off) Fall Time t -14- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 5.5 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 22 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = 5.5 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 270 530 ns rr b T = 25 C, I = 3.5 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.8 2.2 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91047 2 S11-0508-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000